Integrated Silicon Solution, Inc. (ISSI)_IS61LV12824-10TQ
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Integrated Silicon Solution, Inc. (ISSI)
IS61LV12824-10TQ

774-IS61LV12824-10TQ
PDF Datasheet
IC SRAM 3MBIT PARALLEL 100TQFP

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ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

EU RoHS
Not Compliant
ECCN (US)
3A991b.2.a.
Part Status
Obsolete
HTS
8542.32.00.41
Automotive
No
PPAP
No
Chip Density (bit)
3M
Number of Words
128K
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IS61LV12824-10TQ Description

IS61LV12824-10TQ Description

The IS61LV12824-10TQ is a high-performance, 3Mbit SRAM (Static Random Access Memory) IC chip designed by Integrated Silicon Solution, Inc. (ISSI). This memory device is organized as 128K x 24 and features a parallel memory interface, providing efficient data transfer capabilities. It operates within a voltage range of 3.135V to 3.6V and has an access time of 10 nanoseconds, ensuring rapid data retrieval. The IS61LV12824-10TQ is housed in a 100TQFP package, suitable for surface mount applications, and is rated for an operating temperature range of 0°C to 70°C. This device is classified under ECCN 3A991B2A and HTSUS 8542.32.0041, and it is REACH unaffected and ROHS3 compliant, making it suitable for a wide range of industrial and commercial applications. Despite being marked as obsolete, the IS61LV12824-10TQ remains a reliable choice for legacy systems and specific applications requiring its unique memory organization and performance characteristics.

IS61LV12824-10TQ Features

  • Memory Organization: 128K x 24, offering a total memory size of 3Mbit.
  • Access Time: 10 nanoseconds, ensuring fast data access and retrieval.
  • Write Cycle Time: 10 nanoseconds for both word and page writes, maintaining consistent performance.
  • Memory Interface: Parallel interface for efficient data transfer.
  • Operating Temperature: 0°C to 70°C, suitable for a variety of environmental conditions.
  • Voltage Range: 3.135V to 3.6V, providing flexibility in power supply requirements.
  • Package Type: 100TQFP, ideal for surface mount technology (SMT) applications.
  • Compliance: REACH unaffected and ROHS3 compliant, ensuring environmental and safety standards.
  • Moisture Sensitivity Level (MSL): Level 3 (168 hours), suitable for standard manufacturing processes.

IS61LV12824-10TQ Applications

The IS61LV12824-10TQ is well-suited for applications requiring high-speed, volatile memory solutions. Its 128K x 24 memory organization and 10 nanosecond access time make it ideal for:

  • Embedded Systems: Providing fast, reliable memory for microcontroller-based applications.
  • Telecommunications: Enabling rapid data buffering and processing in communication equipment.
  • Industrial Control: Supporting real-time data processing and control in industrial automation systems.
  • Consumer Electronics: Enhancing performance in devices requiring quick access to memory, such as gaming consoles and high-end multimedia devices.

Conclusion of IS61LV12824-10TQ

The IS61LV12824-10TQ stands out as a robust and versatile SRAM IC chip, offering a unique combination of high memory capacity, fast access times, and a parallel memory interface. Despite its obsolete status, it remains a valuable component for applications where its specific memory organization and performance benefits are required. Its compliance with industry standards and environmental regulations further enhances its suitability for a wide range of applications. For engineers and designers working on legacy systems or projects with specific memory requirements, the IS61LV12824-10TQ provides a reliable and efficient solution.

FAQ

What voltage specification is listed for IS61LV12824-10TQ?
The listed voltage-related specification for IS61LV12824-10TQ is 2.97.
What is IS61LV12824-10TQ?
What is the mounting type of IS61LV12824-10TQ?
What package or case is IS61LV12824-10TQ available in?
What operating temperature range does IS61LV12824-10TQ support?
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