Integrated Silicon Solution, Inc. (ISSI)_IS65WV12816BLL-55TLA3
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Integrated Silicon Solution, Inc. (ISSI)
IS65WV12816BLL-55TLA3

774-IS65WV12816BLL-55TLA3
PDF Datasheet
IC SRAM 2MBIT PARALLEL 44TSOP II
12 Weeks

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

PPAP
Yes
Operating Current (mA)
30
Memory Type
Volatile
Product Status
Active
Automotive
Yes
Supplier Package
TSOP-II
Chip Density (bit)
2M
Package / Case
44-TSOP (0.400", 10.16mm Width)
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IS65WV12816BLL-55TLA3 Description

IS65WV12816BLL-55TLA3 Description

The IS65W1V2816BLL-55TLA3 is a high-performance, 2Mbit Static Random Access Memory (SRAM) IC designed for a wide range of applications requiring fast access times and reliable data storage. Manufactured by Integrated Silicon Solution, Inc. (ISSI), this memory IC features a parallel memory interface and is organized as 128K x 16, providing a robust solution for systems needing significant memory capacity and quick data retrieval.

This SRAM IC operates within a supply voltage range of 2.5V to 3.6V, ensuring compatibility with various power supply configurations. It offers an access time of 55 nanoseconds and a write cycle time of 55 nanoseconds, making it suitable for high-speed applications. The IS65WV12816BLL-55TLA3 is housed in a 44-pin TSOP II package, which is ideal for surface mount applications and provides a compact footprint for space-constrained designs.

IS65WV12816BLL-55TLA3 Features

  • Memory Organization: 128K x 16, providing a total memory size of 2Mbit.
  • Access Time: 55 ns, ensuring rapid data retrieval and efficient system performance.
  • Write Cycle Time: 55 ns, matching the access time for consistent high-speed operation.
  • Memory Interface: Parallel, facilitating straightforward integration with existing parallel bus architectures.
  • Supply Voltage: 2.5V to 3.6V, offering flexibility in power supply design.
  • Mounting Type: Surface Mount, suitable for modern PCB assembly processes.
  • Package: 44-pin TSOP II, providing a compact and reliable housing.
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), ensuring durability in various environmental conditions.
  • Regulatory Compliance: REACH Unaffected and ROHS3 Compliant, meeting stringent environmental and safety standards.
  • Product Status: Active, ensuring continued availability and support from the manufacturer.

IS65WV12816BLL-55TLA3 Applications

The IS65WV12816BLL-55TLA3 is ideal for applications requiring fast, reliable, and non-volatile memory solutions. Its high-speed access and write times make it suitable for:

  • Telecommunications: High-speed data buffering and temporary storage in routers and switches.
  • Industrial Control Systems: Real-time data processing and control applications.
  • Automotive Electronics: Onboard systems requiring rapid access to critical data.
  • Consumer Electronics: High-performance gaming consoles and multimedia devices.
  • Medical Equipment: Reliable data storage for diagnostic and monitoring systems.

Conclusion of IS65WV12816BLL-55TLA3

The IS65WV12816BLL-55TLA3 stands out as a versatile and high-performance SRAM IC, offering significant advantages over similar models. Its fast access and write times, combined with a robust parallel interface and compact surface mount package, make it an ideal choice for a wide range of applications. The product's compliance with REACH and ROHS3 standards ensures it meets the highest environmental and safety requirements. For engineers and designers seeking a reliable, high-speed memory solution, the IS65WV12816BLL-55TLA3 from ISSI is a top-tier option.

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