Intel_LD2114AL4
original

Intel
LD2114AL4

774-LD2114AL4
PDF Datasheet
IC SRAM 4KBIT PARALLEL 18CDIP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
EAR99
Memory Organization
1K x 4
Mounting Type
Through Hole
Memory Type
Volatile
Product Status
Active
Supplier Device Package
18-CDIP
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LD2114AL4 Description

LD2114AL4 Description

The LD2114AL4 is an IC SRAM 4KBIT memory chip featuring a parallel memory interface, designed for a wide range of electronic applications. Manufactured by Intel, this memory IC chip is part of the volatile memory category and offers a memory organization of 1K x 4, providing a total memory size of 4Kbit. The device operates within a supply voltage range of 4.5V to 5.5V and has an access time of 200 ns, ensuring fast data retrieval. The write cycle time for both word and page operations is also 200ns, making it highly efficient for rapid data processing. The LD2114AL4 is available in a through-hole mounting type, packaged in bulk, and is classified under HTSUS code 8542.32.0041. It has a moisture sensitivity level (MSL) of 3, which allows for 168 hours of exposure before assembly. The product is currently active and is unaffected by REACH regulations, though it is not applicable for RoHS compliance.

LD2114AL4 Features

  • Parallel Memory Interface: The LD2114AL4 utilizes a parallel memory interface, which allows for high-speed data transfer and efficient communication with other system components.
  • Fast Access Time: With an access time of 200 ns, this memory IC ensures quick data retrieval, making it suitable for applications requiring rapid processing.
  • Write Cycle Efficiency: The write cycle time of 200ns for both word and page operations ensures that data can be written to memory quickly, enhancing overall system performance.
  • Volatile Memory Type: As a volatile memory, the LD2114AL4 retains data only while power is supplied, which is ideal for applications where data needs to be frequently updated or changed.
  • Wide Voltage Range: Operating within a supply voltage range of 4.5V to 5.5V, the LD2114AL4 offers flexibility in power supply requirements, making it compatible with various electronic systems.
  • Through-Hole Mounting: The through-hole mounting type provides a robust and reliable connection, suitable for applications where durability and long-term stability are critical.
  • Moisture Sensitivity Level 3: With an MSL of 3, the LD2114AL4 can withstand up to 168 hours of exposure before assembly, making it suitable for manufacturing environments with varying humidity levels.

LD2114AL4 Applications

The LD2114AL4 is ideal for a variety of applications due to its fast access time, efficient write cycle, and robust mounting type. Some specific use cases include:

  • Embedded Systems: The LD2114AL4's fast access and write times make it suitable for embedded systems where quick data processing is essential, such as in microcontrollers and IoT devices.
  • Industrial Control: The through-hole mounting and wide voltage range ensure reliability and compatibility with industrial control systems that require durable and stable components.
  • Telecommunications: The parallel memory interface and fast data transfer capabilities make the LD2114AL4 an excellent choice for telecommunications equipment where rapid data handling is crucial.
  • Consumer Electronics: The LD2114AL4 can be used in consumer electronics that require fast and efficient memory, such as gaming consoles, digital cameras, and smart home devices.

Conclusion of LD2114AL4

The LD2114AL4 is a versatile and efficient SRAM memory IC chip, offering fast access times, efficient write cycles, and a robust through-hole mounting type. Manufactured by Intel, this memory IC is designed to meet the demands of various electronic applications, from embedded systems to industrial control and telecommunications. Its wide voltage range, moisture sensitivity level, and compliance with industry regulations make it a reliable and durable choice. The LD2114AL4 stands out for its performance benefits and unique features, making it an ideal solution for applications requiring rapid data processing and reliable memory storage.

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