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TE28F800F3B95
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TE28F800F3B95 Description
TE28F800F3B95 Description
The TE28F800F3B95 is a high-performance NOR Flash memory IC manufactured by Intel, designed for applications requiring reliable, high-speed non-volatile storage. With a 512K x 16 (8 Mbit) organization, it offers a 16-bit wide data bus, enabling efficient data transfer for embedded systems. This device operates in Bulk packaging, making it suitable for industrial and commercial applications where space and reliability are critical.
TE28F800F3B95 Features
- High-Density Storage: 8 Mbit capacity (512K x 16) for robust data storage in embedded systems.
- Wide Data Bus: 16-bit interface for faster read/write operations compared to 8-bit alternatives.
- Industrial-Grade Reliability: Designed for demanding environments, though Moisture Sensitivity Level (MSL) is vendor-defined.
- Active Product Status: Ensures long-term availability and support from Intel.
- REACH Compliance: Meets environmental regulations, though classified as REACH Affected, requiring careful handling in certain regions.
TE28F800F3B95 Applications
- Embedded Systems: Ideal for firmware storage in microcontrollers, IoT devices, and industrial automation.
- Automotive Electronics: Suitable for infotainment systems and engine control units (ECUs) due to its robustness.
- Telecommunications: Used in networking equipment for boot code and configuration storage.
- Medical Devices: Reliable non-volatile memory for critical healthcare applications.
Conclusion of TE28F800F3B95
The TE28F800F3B95 stands out as a high-performance NOR Flash solution for applications requiring speed, density, and reliability. Its 16-bit architecture and industrial-grade design make it superior to smaller-bus alternatives, particularly in embedded and automotive systems. While its REACH Affected status and undefined MSL require careful consideration, its active status and Intel’s manufacturing pedigree ensure long-term viability for developers. This device is a compelling choice for engineers seeking a balance of performance and durability in non-volatile memory.



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