International Rectifier_IRF3703PBF
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International Rectifier
IRF3703PBF

278-IRF3703PBF
PDF Datasheet
Power Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

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Tech Specifications

Package/Case
TO-220AB
Continuous Drain Current (ID)
210A
Current Rating
210A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
2.8MR
Lead Free
Lead Free
Max Operating Temperature
175°C
Max Power Dissipation
230W
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IRF3703PBF Description

IRF3703PBF Description

The IRF3703PBF is a high-performance N-Channel Power MOSFET from International Rectifier, designed for applications requiring robust power handling and efficient switching. With a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 210A at 25°C, this MOSFET is well-suited for a variety of power electronics applications.

IRF3703PBF Features

  • High Input Capacitance (Ciss): The IRF3703PBF boasts an impressive input capacitance of 8250 pF @ 25V, which ensures fast switching speeds and minimal signal distortion.
  • Low Gate Charge (Qg): With a maximum gate charge of 209 nC @ 10V, this MOSFET minimizes power losses during switching, enhancing overall efficiency.
  • Low Rds On: The maximum Rds On of 2.8 mOhm @ 76A, 10V, contributes to minimal conduction losses, making the IRF3703PBF ideal for high-current applications.
  • High Power Dissipation: Capable of handling 3.8W (Ta) and 230W (Tc) power dissipation, this MOSFET is suitable for high-power applications.
  • Robust Voltage Handling: The IRF3703PBF can handle gate-source voltages up to ±20V, providing flexibility in various circuit designs.
  • Through-Hole Mounting: The through-hole mounting type offers a secure and reliable connection, making it suitable for applications where mechanical stability is crucial.

IRF3703PBF Applications

The IRF3703PBF is ideal for applications that demand high power handling, efficient switching, and robust voltage management. Some specific use cases include:

  • Power Supplies: Due to its high power dissipation and low conduction losses, the IRF3703PBF is well-suited for power supply designs.
  • Motor Controls: The high current handling capability makes it an excellent choice for motor control applications, where high currents and efficient switching are required.
  • Industrial Automation: In industrial automation systems, the IRF3703PBF can be used for high-power switching and control, ensuring reliable operation in demanding environments.

Conclusion of IRF3703PBF

The IRF3703PBF from International Rectifier stands out for its high input capacitance, low gate charge, and robust voltage handling capabilities. Its low Rds On and high power dissipation make it an excellent choice for high-current and high-power applications. With its through-hole mounting, it offers a reliable solution for applications where mechanical stability is essential. The IRF3703PBF is a versatile MOSFET that delivers high performance and efficiency, making it ideal for a wide range of power electronics applications.

FAQ

What is IRF3703PBF?
IRF3703PBF is a Single FETs, MOSFETs from International Rectifier. This product page provides its main specifications, pricing information, availability, and inquiry options.
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