International Rectifier_IRF430
original

International Rectifier
IRF430

278-IRF430
PDF Datasheet
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

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Tech Specifications

Package/Case
TO-204AA
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
500V
Dual Supply Voltage
500V
Gate to Source Voltage (Vgs)
20V
Lead Pitch
11mm
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IRF430 Description

N-Channel 500 V 4.5A (Tc) 75W (Tc) Through Hole TO-204AA (TO-3)

FAQ

What is the mounting type of IRF430?
IRF430 uses a Through Hole mounting style based on the listed product specifications.
What package or case is IRF430 available in?
What voltage specification is listed for IRF430?
Is IRF430 currently in stock?
What is IRF430?
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