


International Rectifier
IRF430
278-IRF430
PDF Datasheet
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Package/Case
TO-204AA
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
500V
Dual Supply Voltage
500V
Gate to Source Voltage (Vgs)
20V
Lead Pitch
11mm
IRF430 Description
N-Channel 500 V 4.5A (Tc) 75W (Tc) Through Hole TO-204AA (TO-3)
FAQ
What is the mounting type of IRF430?
IRF430 uses a Through Hole mounting style based on the listed product specifications.
What package or case is IRF430 available in?
What voltage specification is listed for IRF430?
Is IRF430 currently in stock?
What is IRF430?



.png)
















.png?x-oss-process=image/format,webp/resize,h_32)










