International Rectifier

IRF6711STRPBF

IRF6711STRPBF Description

The IRF6711STRPBF is a high-performance N-Channel DirectFET™ MOSFET from International Rectifier, designed for applications that require high efficiency and power dissipation. It features a DirectFET™ Isometric SQ package, which offers improved thermal performance and reduced footprint compared to traditional packages. The device is designed to operate at a drain-to-source voltage (Vdss) of 25V and can handle continuous drain currents of 19A at 25°C and 84A at case temperature (Tc). The IRF6711STRPBF also has a low on-resistance (Rds(on)) of 3.8mOhm, which helps reduce power losses and improve efficiency in power conversion applications.

IRF6711STRPBF Features

• Low On-Resistance (Rds(on)): 3.8mOhm at 19A, 10V, which reduces power losses and improves efficiency.
• High Drain Current: Capable of handling 19A at 25°C and 84A at case temperature (Tc), making it suitable for high-power applications.
• DirectFET™ Technology: Offers improved thermal performance and reduced footprint compared to traditional packages.
• Low Gate Charge (Qg): 20 nC at 4.5V, which reduces switching losses and improves efficiency in high-frequency applications.
• Low Input Capacitance (Ciss): 1810 pF at 13V, which reduces parasitic capacitance and improves high-frequency performance.
• Robust Gate Drive: Vgs(th) of 2.35V at 25µA and Vgs(Max) of ±20V, ensuring reliable operation across a wide range of gate drive conditions.
• High Power Dissipation: 2.2W at ambient temperature (Ta) and 42W at case temperature (Tc), allowing for operation in high-power applications.
• Surface Mount Packaging: Facilitates integration into compact and high-density designs.

IRF6711STRPBF Applications

The IRF6711STRPBF is ideal for a variety of high-power and high-efficiency applications, including:

• Switching Power Supplies: Its low Rds(on) and high drain current capabilities make it suitable for high-efficiency power conversion.
• Motor Control: The device's ability to handle high drain currents and its robust gate drive characteristics make it well-suited for motor control applications.
• Battery Management Systems: The IRF6711STRPBF can be used in battery management systems to efficiently manage power flow and protect against overcurrent conditions.
• Industrial Automation: Its high power dissipation and robust performance make it suitable for use in industrial automation systems, such as motor drives and power distribution.

Conclusion of IRF6711STRPBF

The IRF6711STRPBF is a high-performance N-Channel DirectFET™ MOSFET that offers a combination of low on-resistance, high drain current, and improved thermal performance. Its unique features and advantages make it an ideal choice for a wide range of high-power and high-efficiency applications, including switching power supplies, motor control, battery management systems, and industrial automation. With its DirectFET™ technology and robust performance characteristics, the IRF6711STRPBF is a reliable and efficient solution for demanding power electronic applications.