


International Rectifier
IRFB16N60L
285-IRFB16N60L
Power Field-Effect Transistor, 16A I(D), 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Responsible qualityTech Specifications
Drain to Source Breakdown Voltage
600V
Packaging
Rail/Tube
Power Dissipation
310W
RoHS Compliant
No
RoHS
Not Compliant
IRFB16N60L Description
Power Field-Effect Transistor, 16A I(D), 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
FAQ
What is IRFB16N60L?
IRFB16N60L is a RF FETs, MOSFETs from International Rectifier. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for IRFB16N60L?
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