


International Rectifier
IRFU120N
285-IRFU120N
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Continuous Drain Current (ID)
9.4A
Current Rating
9.4A
Drain to Source Breakdown Voltage
100V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Through Hole
IRFU120N Description
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
FAQ
What voltage specification is listed for IRFU120N?
The listed voltage-related specification for IRFU120N is 100V.
Are there related or alternative parts for IRFU120N?
What is IRFU120N?
What operating temperature range does IRFU120N support?
What is the mounting type of IRFU120N?



.png)

























.png?x-oss-process=image/format,webp/resize,h_32)










