


International Rectifier
IRFZ34NSTRL
285-IRFZ34NSTRL
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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Responsible qualityTech Specifications
Package/Case
TO-263
Continuous Drain Current (ID)
29A
Drain to Source Voltage (Vdss)
55V
Max Operating Temperature
175°C
Max Power Dissipation
3.8W
Nominal Vgs
4V
Reach SVHC Compliant
Unknown
RoHS Compliant
No
IRFZ34NSTRL Description
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
FAQ
Are there related or alternative parts for IRFZ34NSTRL?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does IRFZ34NSTRL support?
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