International Rectifier_IRFZ34NSTRL
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International Rectifier
IRFZ34NSTRL

285-IRFZ34NSTRL
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
TO-263
Continuous Drain Current (ID)
29A
Drain to Source Voltage (Vdss)
55V
Max Operating Temperature
175°C
Max Power Dissipation
3.8W
Nominal Vgs
4V
Reach SVHC Compliant
Unknown
RoHS Compliant
No
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IRFZ34NSTRL Description

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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