IXYS / Littelfuse_IXDN502SIA
original

IXYS / Littelfuse
IXDN502SIA

730-IXDN502SIA
IC GATE DRVR LOW-SIDE 8SOIC

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
Input Type
Non-Inverting
Driven Configuration
Low-Side
Rise / Fall Time (Typ)
7.5ns, 6.5ns
ECCN
EAR99
Number of Drivers
2
Gate Type
IGBT, N-Channel, P-Channel MOSFET
Mounting Type
Surface Mount
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IXDN502SIA Description

This electronic device regards Tube method as the top priority. This IXDN502SIA packaging method makes it simple and quick to package big quantities of powdered commodities. This IXDN502SIA is produced by this IXYS / Littelfuse in order to provide enough products to meet consumers’ demand. The blueprint of this IXYS / Littelfuse is to keep pace with the growth of world’s leading level of science and technology. This IXDN502SIA belongs to Gate Drivers ICs category. It’s previous category pertains to Power Management (PMIC). Complete power supply systems can be implemented using Power Management Integrated Circuits (PMICs). It combines several voltage regulators and control circuits onto a single chip. They simplify and cost-effectively manage system power management while reducing component count and board area. This IXDN502SIA is a great fit for embedded processing in a variety of applications. They are includes edge computing, the Internet of Things (IoT), industrial and medical IoT, electric vehicles (EVs), and autonomous cars.

FAQ

What voltage specification is listed for IXDN502SIA?
The listed voltage-related specification for IXDN502SIA is 4.5V ~ 30V.
Is IXDN502SIA currently in stock?
What is the mounting type of IXDN502SIA?
What is IXDN502SIA?
What package or case is IXDN502SIA available in?
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