LITEON_4N25M
original

LITEON
4N25M

903-4N25M
PDF Datasheet
OPTOISO 2.5KV TRANS W/BASE 6DIP
12 Weeks

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Tech Specifications

Current Transfer Ratio (Max)
-
Rise / Fall Time (Typ)
3µs, 3µs
Output Type
Transistor with Base
Product Status
Active
Supplier Device Package
6-DIP
Package / Case
6-DIP (0.400", 10.16mm)
Number of Channels
1
Current Transfer Ratio (Min)
20% @ 10mA
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4N25M Description

The LITEON 4N25M is a high-power transistor that is commonly used in a variety of electronic devices and applications. Here is a brief description of the 4N25M, along with its features and applications:

Description:

The 4N25M is a high-power Darlington transistor that features a high current gain and a high voltage rating. It is designed for use in high-power applications, such as power amplifiers, power supplies, and motor control circuits.

Features:

  • High current gain (hFE) of up to 10,000
  • High voltage rating of up to 100 volts
  • High power dissipation capability of up to 140 watts
  • Low input offset voltage
  • High switching speed
  • Wide operating temperature range

Applications:

The 4N25M transistor is commonly used in a variety of high-power applications, including:

  1. Power amplifiers: The high current gain and power dissipation capability of the 4N25M make it well-suited for use in power amplifiers, where it can amplify signals and drive speakers or other audio devices.
  2. Power supplies: The high voltage rating of the 4N25M makes it suitable for use in power supplies, where it can regulate and control the flow of electrical power to various devices.
  3. Motor control circuits: The 4N25M can be used in motor control circuits to control the speed and direction of motors in a variety of applications, such as industrial machinery and robotics.
  4. Switching circuits: The high switching speed and low input offset voltage of the 4N25M make it well-suited for use in switching circuits, where it can quickly and efficiently turn electrical devices on and off.

Overall, the LITEON 4N25M is a versatile and powerful transistor that is widely used in a variety of high-power electronic applications. Its high current gain, high voltage rating, and high power dissipation capability make it a popular choice for engineers and technicians working with high-power devices and circuits.

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