Macronix_MX29F800CBTI-70G
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Macronix
MX29F800CBTI-70G

774-MX29F800CBTI-70G
PDF Datasheet
8Mb NOR Flash Memory, 70ns, 5V, Parallel, TSOP48
12 Weeks

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Tech Specifications

EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8542.32.00.71
Automotive
No
PPAP
No
Cell Type
NOR
Chip Density (bit)
8M
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MX29F800CBTI-70G Description

Macronix International Co., Ltd.

MX29F800CBTI-70G

8Mbit (1M x 8 / 512K x 16) Parallel NOR Flash Memory · 5V Single Supply · 70ns Access Time · 48‑pin TSOP
🗂️ 8Mbit NOR Flash ⚡ 5V ±10% Supply ⏱️ 70ns Access Time 🔌 Parallel Interface 🌡️ -40°C to +85°C (Industrial)

📖 Product Overview

The MX29F800CBTI-70G is an 8,388,608‑bit (8Mbit) Parallel NOR Flash memory device from Macronix International, organized as either 1,048,576 words × 8 bits (1M x 8) or 524,288 words × 16 bits (512K x 16). It is a high‑performance, 5V single‑power supply flash memory solution designed for embedded systems requiring reliable non‑volatile code and data storage.

This device operates from a single 5V ±10% supply voltage and features a fast 70ns access time. It employs a bottom‑boot sector architecture, providing flexible sector protection for critical data. The memory array is organised into boot sectors, parameter sectors, and main sectors, allowing efficient code and data management. The MX29F800CBTI-70G is fully compatible with JEDEC standards and offers hardware sector protection, temporary sector unlock, and low power consumption with an operating current of just 40 mA max.

The MX29F800CBTI-70G is housed in a standard 48‑pin TSOP (Type I) package (12mm × 20mm), widely used for parallel flash components in PCB designs. It is supplied in tray packaging and is fully RoHS compliant. The device is designed for industrial temperature operation (-40°C to +85°C), ensuring reliable performance in harsh environments.

📋 Technical Specifications

Memory Density
8 Mbit (8,388,608 bits) / 1 Mbyte
Organisation (Switchable)
1M x 8 or 512K x 16
Memory Technology
FLASH - NOR
Interface Type
Parallel (Asynchronous)
Access Time (tAA)
70 ns (max)
Write Cycle Time (tWC)
70 ns (max)
Sector Architecture
Bottom Boot (asymmetrical)
Supply Voltage (Vcc)
4.5V – 5.5V (5V ±10%)
Operating Current (Read)
40 mA (max)
Standby Current
100 µA (max, TTL) / 50 µA (CMOS)
Erase Time
<5 seconds (chip erase)
Endurance
100,000 program/erase cycles (minimum)
Data Retention
20 years (minimum)

✨ Key Features

Single Power Supply Operation – 4.5V to 5.5V for read, erase, and program functions.
High Speed – 70ns access time for high‑performance systems.
Bottom Boot Sector Architecture – Flexible sector protection for critical data.
Sector Protection (Hardware) – Disable any combination of sectors from program or erase operations.
Temporary Sector Unprotection – Allows code changes in previously locked sectors.
Low Power Consumption – 40 mA active read current, 100 µA standby (TTL).
Fast Erase Time – <5 seconds chip erase, <0.5 seconds sector erase.
High Reliability – 100,000 program/erase cycles, 20‑year data retention.
JEDEC Standard Compatible – Pinout and software compatible with industry‑standard flash memories.
Industrial Temperature Range – -40°C to +85°C for harsh environments.
Standard 48‑pin TSOP Package – 12mm × 20mm, 0.5mm lead pitch.
RoHS Compliant & Lead‑Free – Environmentally friendly packaging.

🎯 Typical Applications

Embedded Systems & Industrial Control Telecommunications Equipment (Routers, Switches) Automotive Electronics (ECUs, Infotainment) Consumer Electronics (Gaming Consoles, Printers) Firmware Storage for SoCs, MCUs & DSPs Security Systems & Surveillance Medical Devices & Instrumentation Legacy System Maintenance & Upgrades
Memory Density
8 Mbit
1M x 8 / 512K x 16 organisation
Access Time
70 ns
Fast parallel access
Package Type
TSOP-48
12mm × 20mm, 0.5mm lead pitch, 1.05mm height
🔍 Part Number Decoding (MX29F800CBTI-70G)
MX29 – Macronix Parallel NOR Flash family.
F – 5V (5V single supply voltage).
800 – Density: 8 Mbit.
C – Generation / process node (C‑version).
B – Boot block architecture: Bottom boot.
T – Package: TSOP (48‑pin, 12×20mm).
I – Industrial temperature range (-40°C to +85°C).
70G – 70ns access time, RoHS compliant.
📌 Environmental & Regulatory Information
✅ RoHS Compliant: Yes (ROHS3) ✅ Lead‑Free (Pb): Yes 🌍 MSL: Level 3 – 168 hours 🔌 ECCN: 3A991B1A 🇺🇸 HTSUS: 8542.32.0071 🏭 Country of Origin: Taiwan 📦 Packing: Tray (96 pieces per tray) ⚠️ Product Status: Active (in production)
✅ The MX29F800CBTI-70G is an active production device from Macronix International. For complete command set, timing diagrams, and detailed electrical characteristics, refer to the official Macronix datasheet.
Information compiled from Macronix product documentation, official datasheets, and JEDEC standards.

FAQ

What is the MX29F800CBTI-70G?
A: The MX29F800CBTI-70G is an 8‑megabit (8Mb) Parallel NOR Flash memory device manufactured by Macronix International (MXIC). It is a non‑volatile memory that retains stored data even when power is removed and can be electrically erased and reprogrammed in‑system [7†L12-L13]. The device is organized as 1,048,576 words of 8 bits each (1M x 8) or 524,288 words of 16 bits each (512K x 16), providing a flexible interface for 8‑bit or 16‑bit bus systems [7†L13-L14][10†L12-L13]. It is designed for high‑reliability code and data storage, operating from a single 5V power supply for all read, erase, and program operations [10†L17-L18].
What are the key technical features and specifications?
What interface does the MX29F800CBTI-70G use and how does it communicate with a host processor?
What are the reliability and reliability specifications?
What applications is the MX29F800CBTI-70G intended for, and what is its current lifecycle status?
Availability (In Stock : 7638 )
Quantity Unit Price Ext. Price
1+ $3.96880 $3.97
10+ $3.69512 $36.95
25+ $3.58582 $89.65
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192+ $3.34120 $641.51
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