Microchip Technology_2N5115E3

Microchip Technology
2N5115E3  
JFETs

2N5115E3
288-2N5115E3
Ersa
Microchip Technology-2N5115E3-datasheets-12377425.pdf
JFET P-CH 30V TO18
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2N5115E3 Description

Bulk provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The JFETs that the 2N5115E3 belongs to can be classified under the Discrete Semiconductors. 2N5115E3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. 2N5115E3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Microchip Technology plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Microchip Technology is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Microchip Technology builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Configuration
PCB changed
HTS
FET Type
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
ECCN (US)
Resistance - RDS(On)
PPAP
Maximum Power Dissipation (mW)
Product Status
Supplier Device Package
Automotive
Minimum Operating Temperature (°C)
Drain to Source Voltage (Vdss)
Maximum Operating Temperature (°C)
Supplier Package
Package / Case
Maximum Drain Gate Voltage (V)
REACH Status
Package Height
Mfr
Channel Type
EU RoHS
RoHS Status
Diameter
Operating Temperature
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
ECCN
Current - Drain (Idss) @ Vds (Vgs=0)
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Series
Lead Shape
Power - Max
Part Status
HTSUS
Package
Voltage - Breakdown (V(BR)GSS)
Mounting Style
Gate-Source Cutoff Voltage
Vgs - Gate-Source Breakdown Voltage
Transistor Polarity
Drain-Source Current at Vgs=0
RoHS
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Technology
Maximum Drain Gate Voltage
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

2N5115E3 Documents

Download datasheets and manufacturer documentation for 2N5115E3

Ersa Microchip CA Prop65       Microchip RoHS       Microchip REACH      

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