Microchip Technology_2N5416

Microchip Technology
2N5416  
Single Bipolar Transistors

2N5416
276-2N5416
Ersa
Microchip Technology-2N5416-datasheets-3674995.pdf
PNP TRANSISTORS
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2N5416 Description

2N5416 Description

The 2N5416 is a PNP single bipolar transistor designed and manufactured by Microchip Technology. It is an active product with a maximum collector current (Ic) of 1 A and a maximum power dissipation of 750 mW. The transistor operates within a voltage range of 300 V for collector-emitter breakdown and has a saturation voltage (Vce) of 2V at 5mA and 50mA collector current. The 2N5416 is classified under EAR99 and is REACH unaffected, ensuring compliance with international trade and environmental regulations.

2N5416 Features

  • PNP Transistor Type: The 2N5416 is a PNP transistor, making it suitable for applications requiring positive voltage control.
  • High Current Handling: With a maximum collector current of 1 A, the 2N5416 can handle high current loads in various electronic circuits.
  • Low Saturation Voltage: The low saturation voltage of 2V at 5mA and 50mA collector current ensures efficient operation in low-voltage applications.
  • High Voltage Tolerance: The 300 V collector-emitter breakdown voltage allows the 2N5416 to operate in high-voltage environments.
  • Through Hole Mounting: The through-hole mounting type provides a secure and reliable connection in various PCB designs.
  • Bulk Packaging: The bulk packaging option allows for cost-effective procurement and inventory management.

2N5416 Applications

The 2N5416's unique combination of high current handling, low saturation voltage, and high voltage tolerance makes it ideal for various applications, including:

  1. Audio Amplifiers: The 2N5416's high current handling and low saturation voltage make it suitable for audio amplifiers, where high fidelity and low distortion are required.
  2. Switching Circuits: The PNP transistor type and high voltage tolerance make the 2N5416 an excellent choice for switching circuits, where positive voltage control is needed.
  3. Motor Control: The 2N5416's ability to handle high currents and high voltages makes it suitable for motor control applications, where precise control and high power efficiency are required.
  4. Power Supplies: The 2N5416 can be used in power supply designs, where high voltage tolerance and low saturation voltage are crucial for efficient operation.

Conclusion of 2N5416

The 2N5416 is a versatile PNP single bipolar transistor offering a unique combination of high current handling, low saturation voltage, and high voltage tolerance. Its through-hole mounting and bulk packaging options make it suitable for a wide range of applications, including audio amplifiers, switching circuits, motor control, and power supplies. The 2N5416's compliance with international trade and environmental regulations further enhances its appeal in the global electronics market.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Diameter
Vce Saturation (Max) @ Ib, Ic
Material
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
Continuous Collector Current
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Technology
Gain Bandwidth Product fT
DC Current Gain hFE Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS

2N5416 Documents

Download datasheets and manufacturer documentation for 2N5416

Ersa Product Change Notification 2024-01-23 (PDF)      

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