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Microchip Technology
80-SD1013-03
283-80-SD1013-03
PDF Datasheet
Trans RF BJT NPN 35V 1A 13000mW 4-Pin Style M113
20 weeks
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Tech Specifications
Maximum Junction Case Thermal Resistance
13.5°C/W
Configuration
Single Dual Emitter
PCB changed
4
HTS
EA
Typical Power Gain (dB)
10(Min)
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
80-SD1013-03 Description
Trans RF BJT NPN 35V 1A 13000mW 4-Pin Style M113
FAQ
Are there related or alternative parts for 80-SD1013-03?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does 80-SD1013-03 support?
What is the mounting type of 80-SD1013-03?
What voltage specification is listed for 80-SD1013-03?
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