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A3PN060-1VQ100I
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A3PN060-1VQ100I Description
Microchip Technology's A3PN060-1VQ100I is a high-performance, low-power, 60V N-channel power MOSFET that offers excellent electrical characteristics and reliability for a wide range of applications.
Description:
The A3PN060-1VQ100I is a 3-pin power MOSFET package that features a low on-state resistance (RDS(on)) of 5.3mΩ (maximum) at a VGS of 10V. It also has a low input capacitance (CISS) of 830pF (maximum), which helps to reduce switching losses and improve efficiency.
Features:
- Low on-state resistance (RDS(on)) of 5.3mΩ (maximum) at VGS = 10V
- Low input capacitance (CISS) of 830pF (maximum)
- 60V drain-to-source voltage (VDS)
- High switching speed with low gate charge (Qg) of 34nC (maximum)
- Logic-level gate drive compatible
- Avalanche energy rating of 75 Joules
- Built-in body diode for efficient reverse-conducting applications
- RoHS-compliant and lead-free package
Applications:
The A3PN060-1VQ100I is suitable for various applications that require efficient power conversion and control, including:
- Motor drives and control
- Battery management systems
- Power supplies and DC-DC converters
- Lighting and LED drivers
- Industrial control and automation systems
- Renewable energy systems, such as solar inverters and wind power converters
- Electric vehicles (EV) and hybrid electric vehicles (HEV) charging systems
The A3PN060-1VQ100I's combination of low on-state resistance, low input capacitance, and high voltage rating make it an ideal choice for power electronic applications where efficiency, reliability, and performance are critical.





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