Microchip Technology Tariff Inquiry

A3PN250-Z2VQ100I

The A3PN250-Z2VQ100I is a high-performance, low-voltage, low-power MOSFET from Microchip Technology. This N-channel enhancement mode field effect transistor is designed for use in a variety of applications, including power management, motor control, and battery protection circuits.

Description:

The A3PN250-Z2VQ100I is a surface-mount MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 2.5A. It features a low gate threshold voltage (Vth) of 2V and a low on-state resistance (RDS(on)) of 10mΩ, making it ideal for use in low-voltage, low-power applications.

Features:

1. N-channel enhancement mode MOSFET
2. Maximum drain-source voltage (VDS) of 100V
3. Continuous drain current (ID) of 2.5A
4. Low gate threshold voltage (Vth) of 2V
5. Low on-state resistance (RDS(on)) of 10mΩ
6. Surface-mount package for easy integration into PCB designs
7. Suitable for low-voltage, low-power applications

Applications:

1. Power management circuits
2. Motor control systems
3. Battery protection circuits
4. Portable electronic devices
5. Automotive electronics
6. Industrial control systems
7. Telecommunications equipment

The A3PN250-Z2VQ100I's combination of high performance, low voltage, and low power consumption make it an excellent choice for a wide range of applications where efficient power management and control are critical.