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A3PN250-Z2VQ100I
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A3PN250-Z2VQ100I Description
The A3PN250-Z2VQ100I is a high-performance, low-voltage, low-power MOSFET from Microchip Technology. This N-channel enhancement mode field effect transistor is designed for use in a variety of applications, including power management, motor control, and battery protection circuits.
Description:
The A3PN250-Z2VQ100I is a surface-mount MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 2.5A. It features a low gate threshold voltage (Vth) of 2V and a low on-state resistance (RDS(on)) of 10mΩ, making it ideal for use in low-voltage, low-power applications.
Features:
- N-channel enhancement mode MOSFET
- Maximum drain-source voltage (VDS) of 100V
- Continuous drain current (ID) of 2.5A
- Low gate threshold voltage (Vth) of 2V
- Low on-state resistance (RDS(on)) of 10mΩ
- Surface-mount package for easy integration into PCB designs
- Suitable for low-voltage, low-power applications
Applications:
- Power management circuits
- Motor control systems
- Battery protection circuits
- Portable electronic devices
- Automotive electronics
- Industrial control systems
- Telecommunications equipment
The A3PN250-Z2VQ100I's combination of high performance, low voltage, and low power consumption make it an excellent choice for a wide range of applications where efficient power management and control are critical.



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