Microchip Technology

DN3135N8-G  

Single FETs, MOSFETs

DN3135N8-G Description

The DN3135N8-G is a high-performance MOSFET (Metal Oxide) device from Microchip Technology, designed to meet the demanding requirements of modern electronic systems. This N-Channel, Depletion Mode MOSFET offers a wide range of technical specifications and performance benefits, making it an ideal choice for various applications.

DN3135N8-G Features

• Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
• Drain to Source Voltage (Vdss): 350 V
• Power Dissipation (Max): 1.3W (Ta)
• Technology: MOSFET (Metal Oxide)
• REACH Status: REACH Unaffected
• Vgs (Max): ±20V
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• FET Feature: Depletion Mode
• Mounting Type: Surface Mount
• Rds On (Max) @ Id, Vgs: 35Ohm @ 150mA, 0V
• Current - Continuous Drain (Id) @ 25°C: 135mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Package: Tape & Reel (TR)

The DN3135N8-G stands out from similar models due to its high drain-source voltage rating of 350V, which allows it to handle high-voltage applications with ease. Its low Rds On (35Ohm) ensures efficient power dissipation, while the wide Vgs range of ±20V provides flexibility in gate drive requirements. The device's Depletion Mode operation offers unique advantages in applications requiring low-voltage operation and high input impedance.

DN3135N8-G Applications

The DN3135N8-G is ideal for a variety of applications, including:

1. Power Management: Due to its high voltage and low Rds On, the DN3135N8-G is well-suited for power management applications, such as voltage regulation and power conversion.
2. Motor Control: The device's high voltage rating and low Rds On make it an excellent choice for motor control applications, where high efficiency and low power loss are critical.
3. Automotive Electronics: The DN3135N8-G's robust performance and compliance with automotive standards make it suitable for various automotive electronics applications, such as infotainment systems and power windows.
4. Industrial Control: The device's high voltage and power dissipation capabilities make it ideal for industrial control applications, where reliability and performance are paramount.

Conclusion of DN3135N8-G

In conclusion, the DN3135N8-G from Microchip Technology is a versatile and high-performance MOSFET that offers a unique combination of technical specifications and performance benefits. Its high drain-source voltage, low Rds On, and Depletion Mode operation make it an ideal choice for a wide range of applications, including power management, motor control, automotive electronics, and industrial control. With its robust performance and compliance with industry standards, the DN3135N8-G is a reliable and efficient solution for demanding electronic systems.

DN3135N8-G Documents

Download datasheets and manufacturer documentation for DN3135N8-G

PCN Assembly/Origin :

Assembly Site 09/Nov/2023      

Datasheets :

DN3135      

PCN Packaging :

Packing Changes 10/Oct/2016       Label and Packing Changes 23/Sep/2015      

HTML Datasheet :

DN3135      

PCN Design/Specification :

Die Attach Material Update 26/Aug/2015       DN3135 11/Apr/2017      

Environmental Information :

Microchip CA Prop65       Microchip RoHS       Microchip REACH