Microchip Technology_DN3135N8-G
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Microchip Technology
DN3135N8-G

278-DN3135N8-G
PDF Datasheet
MOSFET N-CH 350V 135MA TO243AA
21 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
15(Max)
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V
Typical Rise Time (ns)
15(Max)
PPAP
No
Channel Mode
Depletion
Typical Turn-On Delay Time (ns)
10(Max)
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DN3135N8-G Description

DN3135N8-G Description

The DN3135N8-G is a high-performance MOSFET (Metal Oxide) device from Microchip Technology, designed to meet the demanding requirements of modern electronic systems. This N-Channel, Depletion Mode MOSFET offers a wide range of technical specifications and performance benefits, making it an ideal choice for various applications.

DN3135N8-G Features

  • Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
  • Drain to Source Voltage (Vdss): 350 V
  • Power Dissipation (Max): 1.3W (Ta)
  • Technology: MOSFET (Metal Oxide)
  • REACH Status: REACH Unaffected
  • Vgs (Max): ±20V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • FET Feature: Depletion Mode
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 35Ohm @ 150mA, 0V
  • Current - Continuous Drain (Id) @ 25°C: 135mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Package: Tape & Reel (TR)

The DN3135N8-G stands out from similar models due to its high drain-source voltage rating of 350V, which allows it to handle high-voltage applications with ease. Its low Rds On (35Ohm) ensures efficient power dissipation, while the wide Vgs range of ±20V provides flexibility in gate drive requirements. The device's Depletion Mode operation offers unique advantages in applications requiring low-voltage operation and high input impedance.

DN3135N8-G Applications

The DN3135N8-G is ideal for a variety of applications, including:

  1. Power Management: Due to its high voltage and low Rds On, the DN3135N8-G is well-suited for power management applications, such as voltage regulation and power conversion.
  2. Motor Control: The device's high voltage rating and low Rds On make it an excellent choice for motor control applications, where high efficiency and low power loss are critical.
  3. Automotive Electronics: The DN3135N8-G's robust performance and compliance with automotive standards make it suitable for various automotive electronics applications, such as infotainment systems and power windows.
  4. Industrial Control: The device's high voltage and power dissipation capabilities make it ideal for industrial control applications, where reliability and performance are paramount.

Conclusion of DN3135N8-G

In conclusion, the DN3135N8-G from Microchip Technology is a versatile and high-performance MOSFET that offers a unique combination of technical specifications and performance benefits. Its high drain-source voltage, low Rds On, and Depletion Mode operation make it an ideal choice for a wide range of applications, including power management, motor control, automotive electronics, and industrial control. With its robust performance and compliance with industry standards, the DN3135N8-G is a reliable and efficient solution for demanding electronic systems.

FAQ

What package or case is DN3135N8-G available in?
DN3135N8-G is available in the TO-243AA package / case.
What is the standard lead time for DN3135N8-G?
What is the mounting type of DN3135N8-G?
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