Microchip Technology_JAN1N6471US
original

Microchip Technology
JAN1N6471US

144-JAN1N6471US
PDF Datasheet
TVS DIODE 12VWM 22.6VC G-MELF
25 Weeks

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Tech Specifications

Current - Peak Pulse (10/1000µs)
374A (8/20µs)
Voltage - Breakdown (Min)
13.6V
Product Status
Active
Power - Peak Pulse
1500W (1.5kW)
Supplier Device Package
G-MELF (D-5C)
Package / Case
SQ-MELF, G
Voltage - Clamping (Max) @ Ipp
22.6V
Voltage - Reverse Standoff (Typ)
12V
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JAN1N6471US Description

Bulk protects the sensitive components and the external environment. This Microchip TechnologyJAN1N6471US belongs to the TVS Diodes classification within the more extensive classification of Circuit Protection. Microchip Technology manufactured a component of this electronic system. Microchip Technology serves a wide range of end markets, including consumer electronics, telecommunications, automotive, industrial automation, healthcare, aerospace, and defense. The industry supplies ICs for applications like microprocessors, memory devices, sensors, power management, wireless connectivity, and more. JAN1N6471US plays a critical role in modern electronics and wireless communication devices, such as smartphones, routers, base stations, and satellite systems.

FAQ

What operating temperature range does JAN1N6471US support?
JAN1N6471US has an operating temperature range of -55°C ~ 175°C (TJ).
Is JAN1N6471US currently in stock?
What is the standard lead time for JAN1N6471US?
What is JAN1N6471US?
What voltage specification is listed for JAN1N6471US?
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