


Microchip Technology
JAN1N6476US
144-JAN1N6476US
PDF Datasheet
TVS DIODE 51.6VWM 78.5VC G-MELF
25 Weeks
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Responsible qualityTech Specifications
Current - Peak Pulse (10/1000µs)
107A (8/20µs)
Voltage - Breakdown (Min)
54V
Product Status
Active
Power - Peak Pulse
1500W (1.5kW)
Supplier Device Package
G-MELF (D-5C)
Package / Case
SQ-MELF, G
Voltage - Clamping (Max) @ Ipp
78.5V
Voltage - Reverse Standoff (Typ)
51.6V
JAN1N6476US Description
Bulk protects the sensitive components and the external environment. This Microchip TechnologyJAN1N6476US belongs to the TVS Diodes classification within the more extensive classification of Circuit Protection. Microchip Technology manufactured a component of this electronic system. Microchip Technology serves a wide range of end markets, including consumer electronics, telecommunications, automotive, industrial automation, healthcare, aerospace, and defense. The industry supplies ICs for applications like microprocessors, memory devices, sensors, power management, wireless connectivity, and more. JAN1N6476US plays a critical role in modern electronics and wireless communication devices, such as smartphones, routers, base stations, and satellite systems.
FAQ
What is the mounting type of JAN1N6476US?
JAN1N6476US uses a Surface Mount mounting style based on the listed product specifications.
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