Microchip Technology_JANTX2N6798

Microchip Technology
JANTX2N6798  
Single FETs, MOSFETs

JANTX2N6798
278-JANTX2N6798
Ersa
Microchip Technology-JANTX2N6798-datasheets-14271064.pdf
Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39
In Stock : 239

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    JANTX2N6798 Description

    Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39

    Tech Specifications

    Category
    Configuration
    PCB changed
    Typical Turn-Off Delay Time (ns)
    HTS
    Maximum Gate Source Leakage Current (nA)
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Typical Rise Time (ns)
    PPAP
    Maximum Power Dissipation (mW)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Automotive
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Supplier Package
    Maximum IDSS (uA)
    Typical Fall Time (ns)
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Diameter
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Gate Source Voltage (V)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    Supplier Temperature Grade
    Typical Gate Charge @ 10V (nC)
    Standard Package Name
    Maximum Diode Forward Voltage (V)
    Pin Count
    Mounting
    Operating Junction Temperature (°C)
    Minimum Gate Threshold Voltage (V)
    Lead Shape
    Part Status
    Typical Gate to Drain Charge (nC)
    Maximum Gate Threshold Voltage (V)
    Typical Gate Charge @ Vgs (nC)

    JANTX2N6798 Documents

    Download datasheets and manufacturer documentation for JANTX2N6798

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