


Microchip Technology
JANTXV1N6471US
144-JANTXV1N6471US
PDF Datasheet
TVS DIODE 12VWM 22.6VC G-MELF
25 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Current - Peak Pulse (10/1000µs)
374A (8/20µs)
Voltage - Breakdown (Min)
13.6V
Product Status
Active
Power - Peak Pulse
1500W (1.5kW)
Supplier Device Package
G-MELF (D-5C)
Package / Case
SQ-MELF, G
Voltage - Clamping (Max) @ Ipp
22.6V
Voltage - Reverse Standoff (Typ)
12V
JANTXV1N6471US Description
Bulk protects the sensitive components and the external environment. This Microchip TechnologyJANTXV1N6471US belongs to the TVS Diodes classification within the more extensive classification of Circuit Protection. Microchip Technology manufactured a component of this electronic system. Microchip Technology serves a wide range of end markets, including consumer electronics, telecommunications, automotive, industrial automation, healthcare, aerospace, and defense. The industry supplies ICs for applications like microprocessors, memory devices, sensors, power management, wireless connectivity, and more. JANTXV1N6471US plays a critical role in modern electronics and wireless communication devices, such as smartphones, routers, base stations, and satellite systems.
FAQ
What voltage specification is listed for JANTXV1N6471US?
The listed voltage-related specification for JANTXV1N6471US is 13.6V.
What is JANTXV1N6471US?
What package or case is JANTXV1N6471US available in?
What operating temperature range does JANTXV1N6471US support?
What is the standard lead time for JANTXV1N6471US?



.png)












.png?x-oss-process=image/format,webp/resize,h_32)










