Microchip Technology_JANTXV2N3637

Microchip Technology
JANTXV2N3637  
Single Bipolar Transistors

JANTXV2N3637
276-JANTXV2N3637
Ersa
Microchip Technology-JANTXV2N3637-datasheets-13070931.pdf
TRANS PNP 175V 1A TO39
In Stock : 1003

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JANTXV2N3637 Description

Bulk provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single Bipolar Transistors that the JANTXV2N3637 belongs to can be classified under the Discrete Semiconductors. JANTXV2N3637 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. JANTXV2N3637 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Microchip Technology plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Microchip Technology is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Microchip Technology builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Grade
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Qualification
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Diameter
Vce Saturation (Max) @ Ib, Ic
Material
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number

JANTXV2N3637 Documents

Download datasheets and manufacturer documentation for JANTXV2N3637

Ersa Mult Dev Assembly Site 23/Jan/2024      
Ersa 2N3634-37(L,UB)      
Ersa 2N3634-37(L,UB)      
Ersa Microchip CA Prop65       Microchip RoHS       Microchip REACH      

Shopping Guide

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