Microchip Technology_LND250K1-G
original

Microchip Technology
LND250K1-G

278-LND250K1-G
PDF Datasheet
MOSFET N-CH 500V 13MA SOT23
9 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
100
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
10 pF @ 25 V
Typical Rise Time (ns)
450
PPAP
No
Channel Mode
Depletion
Typical Turn-On Delay Time (ns)
90
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LND250K1-G Description

LND250K1-G Description

The LND250K1-G is a high-performance MOSFET from Microchip Technology, designed for a wide range of applications in the electronics industry. This N-channel device offers excellent electrical characteristics and robust performance, making it an ideal choice for various power management and signal processing applications.

LND250K1-G Features

  • Technology: MOSFET (Metal Oxide) - Provides high input impedance and low power consumption.
  • Depletion Mode: Enables the device to operate in both enhancement and depletion modes, offering greater flexibility in circuit design.
  • Input Capacitance (Ciss): 10 pF @ 25 V - Minimizes input capacitance, reducing power consumption and improving speed.
  • Drain to Source Voltage (Vdss): 500 V - Ensures reliable operation in high-voltage applications.
  • Power Dissipation (Max): 360 mW (Ta) - Supports efficient power management in various electronic systems.
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500 µA, 0V - Offers low on-resistance for improved efficiency and reduced power loss.
  • Current - Continuous Drain (Id) @ 25°C: 13 mA (Tj) - Delivers sufficient current for various power management and signal processing applications.
  • Mounting Type: Surface Mount - Facilitates easy integration into modern electronic devices.
  • Package: Tape & Reel (TR) - Ideal for automated assembly processes.

LND250K1-G Applications

The LND250K1-G is well-suited for a variety of applications, including:

  1. Power Management: Its high voltage and low on-resistance make it ideal for power switching and regulation in electronic devices.
  2. Signal Processing: The low input capacitance and high input impedance ensure minimal signal distortion and interference.
  3. Automotive Electronics: The device's robust performance and high voltage rating make it suitable for automotive applications, such as engine control units and infotainment systems.
  4. Industrial Control Systems: The LND250K1-G can be used in motor drives, power supplies, and other industrial control applications where high voltage and reliability are critical.

Conclusion of LND250K1-G

The LND250K1-G from Microchip Technology is a versatile and high-performance MOSFET that offers excellent electrical characteristics and robust performance. Its unique features, such as depletion mode operation, low on-resistance, and high voltage rating, make it an ideal choice for a wide range of applications in the electronics industry. With its reliable performance and compliance with industry standards like RoHS3 and REACH, the LND250K1-G is a trusted solution for power management, signal processing, and other demanding applications.

FAQ

What operating temperature range does LND250K1-G support?
LND250K1-G has an operating temperature range of -55°C ~ 150°C (TJ).
What is the mounting type of LND250K1-G?
What voltage specification is listed for LND250K1-G?
What is LND250K1-G?
What package or case is LND250K1-G available in?
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