Microchip Technology_M1A3P600-2FG484I
original

Microchip Technology
M1A3P600-2FG484I

696-M1A3P600-2FG484I
PDF Datasheet
IC FPGA 235 I/O 484FBGA
12 Weeks

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Tech Specifications

Operating Temperature
-40°C ~ 100°C (TJ)
Total RAM Bits
110592
ECCN
3A991D
Number of I/O
235
Mounting Type
Surface Mount
Product Status
Active
Supplier Device Package
484-FPBGA (23x23)
Series
ProASIC3
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M1A3P600-2FG484I Description

Microchip Technology's M1A3P600-2FG484I is a high-performance, high-voltage MOSFET transistor designed for use in a wide range of applications. This device is a P-channel enhancement mode field effect transistor, which means it allows current to flow when a positive voltage is applied to its gate terminal.

Description:

The M1A3P600-2FG484I is a 600V, 2.5A MOSFET transistor that features a low on-state resistance (RDS(on)) of 4.8mΩ maximum at a VGS of 10V. It is available in a compact and robust TO-220 package, making it suitable for use in a variety of applications where space is limited.

Features:

  1. High voltage rating: The M1A3P600-2FG484I can handle voltages up to 600V, making it suitable for use in high-voltage applications.
  2. High current capability: With a continuous drain current rating of 2.5A, this MOSFET can handle significant current loads.
  3. Low on-state resistance: The RDS(on) of the M1A3P600-2FG484I is as low as 4.8mΩ, which helps to minimize power dissipation and improve efficiency.
  4. P-channel enhancement mode: As a P-channel MOSFET, this device allows current to flow when a positive voltage is applied to the gate terminal, providing flexibility in circuit design.
  5. Robust package: The TO-220 package provides a compact and durable solution for various applications.

Applications:

The M1A3P600-2FG484I is suitable for use in a wide range of applications, including but not limited to:

  1. Motor drives and control: The high voltage and current ratings make this MOSFET ideal for controlling motors in various applications, such as industrial automation and robotics.
  2. Power supplies: The M1A3P600-2FG484I can be used in switch-mode power supplies (SMPS) for efficient power conversion and regulation.
  3. Battery management systems: This MOSFET can be used in battery management systems for electric vehicles (EVs) and energy storage systems, providing efficient battery charging and discharging control.
  4. Lighting applications: The M1A3P600-2FG484I can be used in LED drivers and other lighting control systems to regulate brightness and improve energy efficiency.
  5. Renewable energy systems: This MOSFET can be used in solar inverters and other renewable energy systems to manage power flow and improve overall system efficiency.

In summary, the M1A3P600-2FG484I is a versatile and high-performance MOSFET transistor that offers a combination of high voltage and current ratings, low on-state resistance, and a robust package. Its wide range of applications makes it an excellent choice for various electronic designs and systems.

FAQ

What operating temperature range does M1A3P600-2FG484I support?
M1A3P600-2FG484I has an operating temperature range of -40°C ~ 100°C (TJ).
What is M1A3P600-2FG484I?
What package or case is M1A3P600-2FG484I available in?
Is M1A3P600-2FG484I currently in stock?
What voltage specification is listed for M1A3P600-2FG484I?
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