Microchip Technology's MPF100T-1FCG484E is a high-performance, 100-V, N-channel power MOSFET that offers excellent electrical characteristics and reliability for various power conversion applications.
Description:
The MPF100T-1FCG484E is a 5th generation, high-voltage power MOSFET that features a superior trade-off between on-resistance (Rds(on)) and gate charge (Qg). This MOSFET is available in a 48-lead, 7mm x 7mm PowerFLAT 5x6 package, which provides excellent thermal performance and ease of use.
Features:
- High voltage rating: The MPF100T-1FCG484E is designed to operate at voltages up to 100 V, making it suitable for a wide range of power conversion applications.
- Low on-resistance: The MOSFET offers a low Rds(on) of 6.7 mΩ (maximum) at a Vgs of 10 V, which helps reduce power dissipation and improve efficiency.
- Low gate charge: With a Qg of 31 nC (maximum) at a Vgs of 10 V, the MPF100T-1FCG484E provides fast switching performance and reduced switching losses.
- High efficiency: The combination of low Rds(on) and low Qg results in high efficiency, making the MOSFET ideal for power conversion applications.
- Superior trade-off: The 5th generation technology used in the MPF100T-1FCG484E offers a superior trade-off between Rds(on) and Qg compared to previous generations.
- Robust design: The MOSFET features a rugged construction that provides excellent reliability and durability in demanding power conversion applications.
- 48-lead PowerFLAT 5x6 package: The compact package offers excellent thermal performance and ease of use, making it suitable for a wide range of applications.
Applications:
The MPF100T-1FCG484E is suitable for various power conversion applications, including but not limited to:
- Motor drives and control
- Battery
- DC-DC converters
- AC-DC power supplies
- Telecom power systems
- Industrial power supplies
- Renewable energy systems, such as solar inverters and wind power converters
In summary, the MPF100T-1FCG484E is a high-performance, 100-V N-channel power MOSFET that offers a superior trade-off between on-resistance and gate charge, making it an excellent choice for a wide range of power conversion applications. Its robust design, low on-resistance, and low gate charge contribute to high efficiency and reliability in demanding environments.