Microchip Technology_TN0104N8-G

Microchip Technology
TN0104N8-G  
Single FETs, MOSFETs

TN0104N8-G
278-TN0104N8-G
Ersa
Microchip Technology-TN0104N8-G-datasheets-2812300.pdf
MOSFET N-CH 40V 630MA TO243AA
In Stock : 6024

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

TN0104N8-G Description

TN0104N8-G Description

The TN0104N8-G is a high-performance MOSFET (Metal Oxide) from Microchip Technology, designed for applications requiring robust power management and efficient switching. With its N-CH 40V 630mA TO243AA package, this device offers a combination of high input capacitance, low power dissipation, and a wide range of operating voltages, making it ideal for various electronic systems.

TN0104N8-G Features

  • Input Capacitance (Ciss): The TN0104N8-G boasts a maximum input capacitance of 70 pF at 20 V, ensuring fast switching and minimal signal distortion.
  • Drain to Source Voltage (Vdss): Capable of withstanding 40 V, this MOSFET can handle high voltage applications with ease.
  • Power Dissipation: With a maximum power dissipation of 1.6W (Tc), the TN0104N8-G is designed for efficient operation in various power-sensitive environments.
  • Technology: Utilizing advanced MOSFET technology, this device offers superior performance and reliability.
  • Rds On (Max): The TN0104N8-G has a maximum Rds On of 2 Ohms at 1A, 10V, ensuring low resistance and high efficiency in conduction.
  • Vgs(th) (Max): The threshold voltage is a maximum of 1.6V at 500µA, providing excellent control over the device's operation.
  • Current - Continuous Drain (Id): Capable of handling 630mA at 25°C, this MOSFET is suitable for applications requiring high current flow.

TN0104N8-G Applications

The TN0104N8-G is ideal for a variety of applications, including:

  • Power Management: Due to its high voltage and current capabilities, this MOSFET is perfect for managing power in electronic devices.
  • Switching Applications: The low Rds On and high input capacitance make it an excellent choice for switching applications where efficiency and speed are crucial.
  • Automotive Electronics: The TN0104N8-G's robust design and performance make it suitable for use in automotive electronics, where reliability and durability are essential.

Conclusion of TN0104N8-G

The TN0104N8-G from Microchip Technology is a versatile and powerful MOSFET, offering a unique combination of high input capacitance, low power dissipation, and a wide range of operating voltages. Its advanced technology and robust design make it an ideal choice for a variety of applications, including power management, switching, and automotive electronics. With its unique features and advantages over similar models, the TN0104N8-G is a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Series
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

TN0104N8-G Documents

Download datasheets and manufacturer documentation for TN0104N8-G

Ersa Assembly Site 09/Nov/2023      
Ersa TN0104      
Ersa Packing Changes 10/Oct/2016       Label and Packing Changes 23/Sep/2015      
Ersa TN0104      
Ersa TN0104 25/Jun/2020      
Ersa Microchip CA Prop65       Microchip RoHS       Microchip REACH      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service