Microchip Technology_TP0604N3-G

Microchip Technology
TP0604N3-G  
Single FETs, MOSFETs

TP0604N3-G
278-TP0604N3-G
Ersa
Microchip Technology-TP0604N3-G-datasheets-4550231.pdf
MOSFET P-CH 40V 430MA TO92-3
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TP0604N3-G Description

TP0604N3-G Description

The TP0604N3-G from Microchip Technology is a P-Channel MOSFET designed for efficient power management in low-voltage applications. With a drain-to-source voltage (Vdss) rating of 40V and a continuous drain current (Id) of 430mA, this device is optimized for compact, energy-efficient designs. Its low input capacitance (Ciss) of 150pF @ 20V ensures fast switching performance, while the maximum Rds(on) of 2Ω @ 1A, 10V minimizes conduction losses. The MOSFET operates with a gate threshold voltage (Vgs(th)) as low as 2.4V @ 1mA, making it compatible with low-drive-voltage circuits. Packaged in a TO-92-3 through-hole format, it is suitable for prototyping and industrial applications requiring reliable through-hole mounting.

TP0604N3-G Features

  • Low Rds(on): 2Ω @ 1A, 10V for reduced power dissipation.
  • Fast Switching: Low input capacitance (150pF) enhances high-frequency performance.
  • Wide Vgs Range: Supports ±20V, offering flexibility in gate drive design.
  • High Efficiency: Optimized for low-voltage operation (drive voltage: 5V–10V).
  • Robust Construction: TO-92-3 package ensures mechanical durability.
  • Compliance: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for environmental and handling reliability.
  • Low Threshold Voltage: 2.4V @ 1mA enables compatibility with logic-level signals.

TP0604N3-G Applications

  • Power Management: Ideal for DC-DC converters, load switches, and battery protection circuits due to low Rds(on) and efficient switching.
  • Portable Electronics: Suitable for low-power devices such as handheld instruments, where space and energy efficiency are critical.
  • Automotive Systems: Used in low-voltage automotive modules (e.g., sensors, lighting) thanks to its 40V rating and reliability.
  • Industrial Controls: Deployed in relay drivers and motor control circuits requiring through-hole mounting.
  • Consumer Electronics: Fits power-saving modes in appliances and peripherals.

Conclusion of TP0604N3-G

The TP0604N3-G stands out as a high-performance P-Channel MOSFET for low-power, high-efficiency applications. Its low conduction losses, fast switching, and robust TO-92-3 package make it a versatile choice for designers prioritizing reliability and compactness. With compliance to environmental standards and broad applicability in automotive, industrial, and consumer electronics, this MOSFET is a dependable solution for modern power management challenges.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Series
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

TP0604N3-G Documents

Download datasheets and manufacturer documentation for TP0604N3-G

Ersa TP0604N3 28/Feb/2022      
Ersa TP0604      
Ersa Label and Packing Changes 23/Sep/2015      
Ersa TP0604      
Ersa TP0604 22/Jul/2019      
Ersa Microchip CA Prop65       Microchip RoHS       Microchip REACH      

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