The TP0604N3-G from Microchip Technology is a P-Channel MOSFET designed for efficient power management in low-voltage applications. With a drain-to-source voltage (Vdss) rating of 40V and a continuous drain current (Id) of 430mA, this device is optimized for compact, energy-efficient designs. Its low input capacitance (Ciss) of 150pF @ 20V ensures fast switching performance, while the maximum Rds(on) of 2Ω @ 1A, 10V minimizes conduction losses. The MOSFET operates with a gate threshold voltage (Vgs(th)) as low as 2.4V @ 1mA, making it compatible with low-drive-voltage circuits. Packaged in a TO-92-3 through-hole format, it is suitable for prototyping and industrial applications requiring reliable through-hole mounting.
The TP0604N3-G stands out as a high-performance P-Channel MOSFET for low-power, high-efficiency applications. Its low conduction losses, fast switching, and robust TO-92-3 package make it a versatile choice for designers prioritizing reliability and compactness. With compliance to environmental standards and broad applicability in automotive, industrial, and consumer electronics, this MOSFET is a dependable solution for modern power management challenges.
Download datasheets and manufacturer documentation for TP0604N3-G