The VN2106N3-G is a high-performance N-Channel MOSFET from Microchip Technology, designed for a wide range of applications in the electronics industry. This device offers excellent electrical characteristics, making it an ideal choice for various power management and switching applications. With a maximum drain-to-source voltage of 60V and a continuous drain current of 300mA at 25°C, the VN2106N3-G delivers reliable performance in demanding environments.
VN2106N3-G Features
Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power consumption.
Input Capacitance (Ciss): 50 pF @ 25 V - Minimizes input capacitance, reducing power loss and improving switching speed.
Drain to Source Voltage (Vdss): 60 V - Suitable for high-voltage applications.
Power Dissipation (Max): 1W (Tc) - Ensures reliable operation in high-power applications.
Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V - Offers low on-resistance for efficient power management.
Vgs(th) (Max) @ Id: 2.4V @ 1mA - Enables low-voltage operation and reduces power consumption.
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V - Allows for flexible control and compatibility with various gate drive circuits.
Mounting Type: Through Hole - Facilitates easy integration into existing PCB designs.
Package: Bag - Provides convenient packaging for bulk purchases.
VN2106N3-G Applications
The VN2106N3-G is ideal for various applications where high performance, reliability, and efficiency are critical:
Power Management: Due to its low on-resistance and high voltage capability, the VN2106N3-G is well-suited for power management applications, such as voltage regulation and power distribution in electronic devices.
Motor Control: The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
Switching Applications: The VN2106N3-G's low input capacitance and high switching speed make it ideal for high-frequency switching applications, such as power converters and inverters.
Conclusion of VN2106N3-G
The VN2106N3-G from Microchip Technology is a versatile and high-performance N-Channel MOSFET that offers excellent electrical characteristics and reliability. Its unique features, such as low on-resistance, high voltage capability, and low input capacitance, make it an ideal choice for a wide range of applications in the electronics industry, including power management, motor control, and switching applications. With its active product status and compliance with various industry standards, the VN2106N3-G is a reliable and efficient solution for your next electronic design.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Series
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
VN2106N3-G Documents
Download datasheets and manufacturer documentation for VN2106N3-G
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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