Microchip Technology_VP3203N8-G

Microchip Technology
VP3203N8-G  
Single FETs, MOSFETs

VP3203N8-G
278-VP3203N8-G
Ersa
Microchip Technology-VP3203N8-G-datasheets-9166226.pdf
MOSFET P-CH 30V 1.1A TO243AA
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VP3203N8-G Description

VP3203N8-G Description

The VP3203N8-G from Microchip Technology is a P-Channel MOSFET designed for high-efficiency power management applications. With a 30V drain-to-source voltage (Vdss) and 1.1A continuous drain current (Id), this device is optimized for low-power switching and load control. It features a low on-resistance (Rds(on)) of 600mΩ at 1.5A and 10V gate drive, ensuring minimal conduction losses. The MOSFET operates with a gate threshold voltage (Vgs(th)) of 3.5V (max) at 10mA, making it compatible with standard logic-level drive circuits. Packaged in a TO-243AA (SOT-89) surface-mount form factor, it is suitable for space-constrained designs.

VP3203N8-G Features

  • Low Input Capacitance: 300pF (max) at 25V reduces switching losses, improving efficiency in high-frequency applications.
  • Wide Gate Drive Range: Supports ±20V Vgs (max), enhancing flexibility in various drive conditions.
  • Power Efficiency: 1.6W max power dissipation (Ta) ensures reliable thermal performance in compact designs.
  • Robust Construction: ROHS3 Compliant and REACH Unaffected, meeting stringent environmental standards.
  • Reliability: MSL 1 (Unlimited) moisture sensitivity rating ensures long shelf life and ease of handling.
  • Optimized Drive Voltage: Operates efficiently at 4.5V to 10V gate drive, balancing performance and power consumption.

VP3203N8-G Applications

  • Battery Management: Ideal for load switching and reverse polarity protection in portable devices.
  • Power Distribution: Used in DC-DC converters and voltage regulation circuits due to low Rds(on).
  • Signal Switching: Suitable for analog/digital multiplexing in low-voltage systems.
  • Consumer Electronics: Commonly deployed in smartphones, wearables, and IoT devices for power gating.
  • Industrial Controls: Reliable performance in motor drivers and solenoid control applications.

Conclusion of VP3203N8-G

The VP3203N8-G stands out as a high-performance P-Channel MOSFET, offering low on-resistance, efficient switching, and compact packaging. Its wide gate drive tolerance and low power dissipation make it a versatile choice for modern electronics. Whether in battery-powered systems, power management, or industrial controls, this MOSFET delivers reliable operation and energy efficiency, making it a preferred solution for engineers seeking optimized performance in constrained spaces.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Series
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

VP3203N8-G Documents

Download datasheets and manufacturer documentation for VP3203N8-G

Ersa Assembly Site 09/Nov/2023      
Ersa VP3203      
Ersa Packing Changes 10/Oct/2016       Label and Packing Changes 23/Sep/2015      
Ersa VP3203 Development Tool Selector      
Ersa VP3203      
Ersa Die Attach Material Update 26/Aug/2015       VP3203 20/Dec/2021      
Ersa Microchip CA Prop65       Microchip RoHS       Microchip REACH      

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