The VP3203N8-G from Microchip Technology is a P-Channel MOSFET designed for high-efficiency power management applications. With a 30V drain-to-source voltage (Vdss) and 1.1A continuous drain current (Id), this device is optimized for low-power switching and load control. It features a low on-resistance (Rds(on)) of 600mΩ at 1.5A and 10V gate drive, ensuring minimal conduction losses. The MOSFET operates with a gate threshold voltage (Vgs(th)) of 3.5V (max) at 10mA, making it compatible with standard logic-level drive circuits. Packaged in a TO-243AA (SOT-89) surface-mount form factor, it is suitable for space-constrained designs.
The VP3203N8-G stands out as a high-performance P-Channel MOSFET, offering low on-resistance, efficient switching, and compact packaging. Its wide gate drive tolerance and low power dissipation make it a versatile choice for modern electronics. Whether in battery-powered systems, power management, or industrial controls, this MOSFET delivers reliable operation and energy efficiency, making it a preferred solution for engineers seeking optimized performance in constrained spaces.
Download datasheets and manufacturer documentation for VP3203N8-G