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Micron Technology

MT25QU02GCBB8E12-0SIT

Name: MT25QU02GCBB8E12-0SIT
Brand: Micron Technology
SKU: 774-MT25QU02GCBB8E12-0SIT
Price: 59.66400 USD
Availability: InStock

Manufacturer:

Micron Technology

ERSA Part #:

774-MT25QU02GCBB8E12-0SIT

Datasheet:

PDF Datasheet

Description:

IC FLASH 2GBIT SPI 24TPBGA

Standard Lead Time:

26 Weeks

RoHS Status:

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1-2 days delivery

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Responsible quality

Tech Specifications

Clock Frequency

133 MHz

Unit Weight

0.215728 oz

Part Status Code

Production

Component Density

2Gb

Number of Components

Memory Type

Non-Volatile

Product Status

Active

RoHS

RoHS Compliant

MT25QU02GCBB8E12-0SIT Description

Micron Technology | 1.8V Serial NOR Flash

MT25QU02GCBB8E12-0SIT

2Gb (256MB) 1.8V Quad SPI NOR Flash | 166MHz STR | Execute-in-Place (XIP) | Industrial Temperature

✔️ Industrial Temp: -40°C to +85°C ⚡ 166MHz / 166MT/s

BRAND

Micron

MT25Q Series

2Gb
Density (256MB)

1.7-2.0V
Supply Range

166MHz
STR Clock

166MT/s
Quad Throughput

T-PBGA-24
6x8mm Package

Product Overview

The Micron MT25QU02GCBB8E12-0SIT is a high‑performance 2Gb (2,147,483,648 bits) serial NOR Flash memory from the MT25Q family. It is a stacked device consisting of four 512Mb dies in a single package[reference:0]. Operating at a low voltage of 1.7V to 2.0V (1.8V nominal)[reference:1][reference:2], this device is optimized for advanced embedded systems requiring large code storage, execute‑in‑place (XIP), and fast data access. It supports standard SPI, Dual SPI, and Quad SPI interfaces, with a maximum clock frequency of 166 MHz in Single Transfer Rate (STR) mode[reference:3][reference:4], delivering a read throughput of up to 166 MT/s[reference:5].

The device is organized as 256M x 8 (2Gb)[reference:6], with a flexible erase architecture: 64KB sectors, 4KB and 32KB subsectors. Housed in a compact 24‑ball T-PBGA (6x8mm) package[reference:7], it operates over the industrial temperature range of -40°C to +85°C[reference:8][reference:9]. With 100,000 program/erase cycles[reference:10] and 20‑year data retention[reference:11], the MT25QU02GCBB delivers the endurance and reliability required for industrial control, networking, medical devices, and automotive applications.

📊 Technical Specifications

Density / Organization	2Gb (256M x 8) — 256MB[reference:12]
Device Architecture	Stacked device (four 512Mb dies)[reference:13]
Memory Interface	SPI / Dual SPI / Quad SPI[reference:14]
Max Clock Frequency (STR)	166 MHz[reference:15][reference:16]
Quad Read Throughput	166 MT/s[reference:17]
Write Cycle Time (Word, Page)	8ms, 2.8ms[reference:18]
Page Program Time (tPP)	1800µs[reference:19]
Erase Granularity	64KB sector, 32KB subsector, 4KB subsector
Supply Voltage (Vcc)	1.7V – 2.0V[reference:20][reference:21]
Operating Temperature	Industrial: -40°C to +85°C[reference:22][reference:23]
Storage Temperature	-65°C to +150°C
Package Type	24‑ball T-PBGA (6x8mm)[reference:24]
Package Dimensions	6.00 x 8.00 x 1.20 mm
Endurance	100,000 program/erase cycles[reference:25]
Data Retention	20 years @ 55°C[reference:26]
Write Protection	Hardware WP# pin, software block protection
Security Features	64‑byte OTP, unique 64‑bit ID
Address Modes	3‑byte and 4‑byte address modes
RoHS / Halogen Free	Yes — RoHS3 compliant[reference:27]
Moisture Sensitivity Level	MSL 3 – 168 hours[reference:28][reference:29]
ECCN	3A991B1A[reference:30]
Part Status	Active[reference:31]

✨ Key Features

✅ High‑Speed Quad SPI – 166MHz STR, up to 166 MT/s throughput for fast XIP and boot[reference:32][reference:33]
✅ Low Voltage 1.8V Operation – 1.7‑2.0V range, ideal for advanced SoCs and FPGAs[reference:34]
✅ 2Gb High Density – 256MB for firmware, data logging, and OTA updates[reference:35]
✅ Stacked Die Architecture – Four 512Mb dies in a single package for high density[reference:36]
✅ Execute‑in‑Place (XIP) Support – Direct code execution from Flash memory[reference:37]
✅ Flexible Erase Architecture – 64KB sectors, 32KB/4KB subsectors for granular data management
✅ Hardware & Software Write Protection – WP# pin and configurable protected area
✅ 64‑byte OTP Area – Dedicated one‑time programmable memory for secure data storage
✅ Program/Erase Suspend – Allows interruption of operations for latency‑sensitive reads
✅ High Reliability – 100K P/E cycles, 20‑year data retention at 55°C[reference:38]
✅ Industrial Temperature Range – -40°C to +85°C for harsh environments[reference:39]
✅ Compact T-PBGA-24 Package – 6x8mm footprint, ideal for space‑constrained designs[reference:40]
✅ 3‑byte and 4‑byte Address Modes – Enables memory access beyond 128Mb
✅ JEDEC Standard Command Set – Interoperable with most SPI NOR Flash controllers
✅ RoHS & REACH Compliant – Green, halogen‑free, lead‑free[reference:41]
✅ Long‑term Availability – Micron’s commitment to industrial and embedded markets (15+ years)
✅ Intel EPCQ‑L Compatible – T-PBGA-24 package compatible with Intel EPCQ‑L devices[reference:42]

🎯 Target Applications:

Industrial control systems, networking routers/switches, set‑top boxes, smart home hubs, IoT gateways, medical devices, automotive aftermarket infotainment, FPGA configuration storage, and battery‑powered portable devices.

⚡ Quad SPI Performance & Modes

Standard SPI (1-1-1)

Single I/O: 166 Mbps (STR)
Compatible with all SPI hosts

Dual SPI (1-1-2)

2‑bit read: 332 Mbps (STR)
Good speed / pin trade‑off

Quad SPI (1-4-4)

4‑bit read: 166 MT/s (166 MB/s)
Optimal XIP performance[reference:43]

The MT25QU02GCBB supports QPI (Quad Peripheral Interface) mode where all commands and addresses are transmitted over 4 I/O lines. It also features Single Transfer Rate (STR) mode, providing flexibility for high‑speed random access and enabling seamless execute‑in‑place (XIP) without code shadowing to RAM[reference:44].

🏗️ Stacked Die Architecture

The MT25QU02GCBB is a stacked device consisting of four 512Mb dies integrated into a single package[reference:45]. This architecture enables high-density storage (2Gb / 256MB) in a standard footprint while maintaining the performance and reliability characteristics of Micron's NOR Flash technology. The stacked die configuration is fully transparent to the system, with the device appearing as a single 2Gb memory array. This design approach allows for cost-effective high-density solutions without compromising on speed or endurance.

🔧 Key Architecture Features

• Four 512Mb stacked dies

• 256M x 8 organization

• 3‑byte and 4‑byte addressing

• 64KB sector erase

• 4KB/32KB subsector erase

• Execute‑in‑Place (XIP) support

🔒 Security & Write Protection Features

🔑 Unique 64‑bit Device ID
Each MT25QU02GCBB is factory‑programmed with a unique serial number, enabling device authentication, anti‑counterfeiting, and simple inventory tracking.

📦 64‑byte OTP (One‑Time Programmable) Register
A dedicated OTP area outside the main memory for permanent storage of encryption keys, serial numbers, or manufacturing data. The OTP region can be locked permanently to prevent further writes.

🛡️ Flexible Write Protection
Volatile and nonvolatile locking for each 64KB sector. Nonvolatile configuration locking and password protection provide additional security layers. Hardware write protection (WP# pin) and software write protection with write enable latch are also supported.

⏸️ Program/Erase Suspend & CRC Protection
During a long erase operation, the host can issue a suspend command, perform a read from another sector, and then resume the erase without data corruption.

📦 Ordering Information & Part Number Decoder

Orderable Part Number	Temperature	Package	Description
MT25QU02GCBB8E12-0SIT	-40°C to +85°C	T-PBGA-24 (6x8mm)	Industrial, 1.8V, tray (1,122 pcs/tray)[reference:46]
MT25QU02GCBB8E12-0SIT TR	-40°C to +85°C	T-PBGA-24 (6x8mm)	Tape & Reel (2,500 pcs/reel)[reference:47]
MT25QU02GCBB8E12-0AAT	-40°C to +105°C	T-PBGA-24 (6x8mm)	Automotive Grade (AEC-Q100)[reference:48]

🔍 Part Number Breakdown (MT25QU02GCBB8E12-0SIT):
• MT25Q – Micron Quad SPI NOR Flash family
• U – 1.8V (U) vs L for 3.3V
• 02G – 2Gb density
• CBB – Configuration / die revision (stacked device)
• 8E12 – Package: T-PBGA-24 (6x8mm)
• 0 – Standard security
• SIT – Industrial temperature (-40°C to +85°C), lead‑free

🏆 Micron Technology – Leader in NOR Flash

Micron Technology is a global leader in memory and storage solutions, with over 40 years of innovation. The MT25Q family represents Micron’s high‑performance, low‑voltage NOR Flash portfolio, widely used in industrial, automotive, and consumer electronics. Micron’s NOR Flash products are known for excellent endurance, data retention, and long‑term supply continuity.

Top 3 NOR Flash supplier worldwide – trusted by major OEMs
AEC‑Q100 qualified automotive grade options available
ISO 9001, ISO 14001, IATF 16949 certified fabs
Advanced NOR process nodes for high density and low power
Long‑term product commitment – 15‑20 year availability for industrial and automotive
JESD47H‑compliant – Industry‑standard reliability qualification

🌟 Why Choose MT25QU02GCBB8E12-0SIT?

• Industry‑standard 166MHz STR Quad read – 166 MT/s[reference:49]

• 256MB density in compact 6x8mm T-PBGA package[reference:50]

• Industrial temperature -40°C to +85°C[reference:51]

• 100K endurance / 20‑year data retention[reference:52]

• 3‑byte and 4‑byte address modes for flexible addressing

• Intel EPCQ‑L compatible – drop‑in replacement[reference:53]

• Backed by Micron’s quality and long‑term supply

🛠️ Development Tools & Support

📄 Datasheet & App Notes

Full specification, AC/DC characteristics, timing diagrams, and hardware design guidelines[reference:54].

💻 Software Drivers

Example C code for SPI read/write, Quad mode initialization, and protection management (available on Micron GitHub).

🔌 Programmer Support

Compatible with all major programmers: Elnec, Xeltek, DediProg, Segger J‑Link (SPI mode).

Micron provides free samples, evaluation boards, and direct FAE support through authorized distributors. Design‑in assistance, IBIS models, and failure analysis are available for qualified customers.

📄 Certifications & Compliance

RoHS 2011/65/EU (Compliant)[reference:55]
REACH SVHC (Compliant)[reference:56]
Halogen‑free per IEC 61249-2-21
Conflict Minerals (CFSI) report available
ECCN: 3A991B1A[reference:57]
Country of Origin: United States[reference:58]

📦 Packaging & Logistics

Tray: 1,122 pieces per tray[reference:59]
Tape & Reel: 2,500 pieces per 13" reel[reference:60]
Moisture Sensitivity Level: MSL 3 (168 hours)[reference:61]
Lead finish: NiPdAu (green, lead‑free)
Lead time: 8‑10 weeks ARO, stock via distributors

📧 [email protected] | 🌐 www.micron.com/products/nor-flash/mt25q

FAQ

This is a 2-gigabit (2 Gb / 256 MB) high-performance serial NOR Flash memory device. It is organized as 256M words × 8 bits (256M x 8) and utilizes a high-speed SPI (Serial Peripheral Interface) bus with Quad I/O support. The device features a stacked architecture consisting of four 512Mb die.