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Micron Technology_MT29C4G96MAAHBACKD-5 WT

Micron Technology

MT29C4G96MAAHBACKD-5 WT

Name: MT29C4G96MAAHBACKD-5 WT
Brand: Micron Technology
SKU: 774-MT29C4G96MAAHBACKD-5 WT

Manufacturer:

Micron Technology

ERSA Part #:

774-MT29C4G96MAAHBACKD-5 WT

Datasheet:

PDF Datasheet

Description:

IC FLASH RAM 4GBIT PAR 137VFBGA

RoHS Status:

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Tech Specifications

Clock Frequency

200 MHz

Operating Temperature

-25°C ~ 85°C (TA)

Memory Interface

Parallel

ECCN

3A991B1A

Memory Organization

256M x 16 (NAND), 128M x 32 (LPDRAM)

Mounting Type

Surface Mount

Memory Type

Non-Volatile, Volatile

Product Status

Obsolete

MT29C4G96MAAHBACKD-5 WT Description

MCP Storage (NAND + LPDDR)

MT29C4G96MAAHBACKD-5 WT

Micron Technology — Integrated Memory & Storage in a Single Package

4Gb SLC NAND + 96Mb LPDDR SDRAM · Extended Temperature · 137-Ball TFBGA

NAND Density

4 Gb

LPDDR Density

96 Mb

Temperature

-25°C ~ +85°C

Package

137-Ball TFBGA

Product Overview

The Micron MT29C4G96MAAHBACKD-5 WT is a highly integrated Multi-Chip Package (MCP) that combines a 4Gb SLC NAND Flash and a 96Mb LPDDR SDRAM in a single, space-saving BGA footprint. This all-in-one approach dramatically reduces board area, simplifies layout, and accelerates design cycles for portable and embedded systems that require both non-volatile code storage and low-power volatile memory.

The NAND portion provides 4Gb (512MB) of high-endurance SLC storage ideal for operating system images, firmware, and data logging. The LPDDR die offers 96Mb of low-power DRAM for fast program execution and buffering. With the -5 speed grade and WT extended temperature range of -25°C to +85°C, this MCP is perfectly suited for industrial handhelds, automotive telematics, and outdoor IoT devices operating under challenging thermal conditions.

Key Features

✓ MCP Integration: 4Gb SLC NAND + 96Mb LPDDR in one package
✓ SLC NAND with up to 100K program/erase cycles and 20-year data retention
✓ LPDDR SDRAM operating at up to 200MHz clock, low-power self-refresh
✓ Single unified 137-Ball TFBGA package saves critical board space
✓ Extended temperature range: -25°C to +85°C
✓ Optimized for low-power mobile and embedded applications

Technical Specifications

Part Number	MT29C4G96MAAHBACKD-5 WT
Brand	Micron Technology
Type	MCP (SLC NAND + LPDDR)
NAND Density	4 Gb (512M x 8)
LPDDR Density	96 Mb (6M x 16)
NAND Interface	Asynchronous (Standard)
LPDDR Speed	Up to 200 MHz (DDR400)
Voltage	NAND: 2.7-3.6V / LPDDR: 1.7-1.95V
Package	137-Ball TFBGA
Temp. Range	-25°C to +85°C

Target Applications

Wearables & Smartwatches IoT Modules & Sensors Automotive Telematics Portable Medical Devices Handheld Point-of-Sale Industrial Data Loggers GPS & Asset Trackers Embedded Edge Computing

🌍 Worldwide Stock & Long-Term Supply — The MT29C4G96MAAHBACKD-5 WT is an active MCP product with guaranteed longevity. We offer competitive pricing, full reel quantities, and fast global delivery. RoHS and REACH compliant. Contact us for a detailed datasheet, samples, or a tailored volume quotation.

FAQ

This is a multi-chip package (MCP) memory device that integrates a 4Gb SLC NAND Flash die and a 4Gb LPDDR2 SDRAM die in a single package. The NAND portion is typically organized as 512M x 8 bits, while the LPDDR2 DRAM is organized as 128 Meg x 32 bits. Together they provide 512 MB of non‑volatile storage and 512 MB of volatile RAM.