Micron Technology Tariff Inquiry

MT29C4G96MAZBACKD-5 WT

Product Overview

The Micron MT29C4G96MAZBACKD-5 WT is a high-density Multi-Chip Package (MCP) that combines 4 Gb NAND Flash and 4 Gb DDR SDRAM (total 8 Gb) in a single compact 137-ball BGA package. This device integrates two separate die stacks, offering a space-saving solution for mobile, embedded, and automotive applications. The NAND Flash provides reliable non-volatile storage with a 20 ns read cycle, while the DDR SDRAM delivers high-speed volatile memory at 200 MHz (CL=3). The "WT" suffix indicates a wide temperature range (–25°C to +85°C), making it ideal for demanding environments.

• Total Density: 8 Gb (1 GB)
• NAND: 4 Gb, x16 or x32 (configurable)
• DDR SDRAM: 4 Gb, x16 (separate bus)
• NAND Organization: 512M × 8 or 256M × 16
• DDR Organization: 128M × 32

• NAND tRC: 20 ns (max) – -5 grade
• NAND tWC: 45 ns (page program)
• DDR Clock: 200 MHz (max)
• DDR CAS Latency: 3
• DDR tRCD / tRP: 20 ns

• VCC (NAND): 2.7 V – 3.6 V
• VDD (DDR): 2.5 V ± 0.2 V
• Package: 137-ball BGA (12×14 mm)
• Operating Temp: –25°C to +85°C (WT)
• Interface: Parallel (NAND), SDR/DDR (separate)

• ✓ Dual-die MCP – NAND + DDR in one package
• ✓ NAND: block erase, page program/read
• ✓ DDR: auto-refresh, self-refresh modes
• ✓ Wide temperature (WT) for industrial use
• ✓ Separate I/O for NAND and DDR buses
• ✓ Internal ECC (NAND) and on-die termination (DDR)