Micron Technology_MT29F128G08AKCABH2-10ITZ:A

Micron Technology
MT29F128G08AKCABH2-10ITZ:A  
Memory ICs Products

Micron Technology
MT29F128G08AKCABH2-10ITZ:A
774-MT29F128G08AKCABH2-10ITZ:A
Ersa
Micron Technology-MT29F128G08AKCABH2-10ITZ:A-datasheets-10224707.pdf
IC FLASH 128GBIT PAR 100TBGA
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MT29F128G08AKCABH2-10ITZ:A Description

MT29F128G08AKCABH2-10ITZ:A Description

The MT29F128G08AKCABH2-10ITZ:A is a high-density 128Gbit (16GB) NAND Flash memory device from Micron Technology, designed for high-performance embedded storage applications. It features a parallel interface with a 100 MHz clock frequency, enabling fast data transfer rates suitable for demanding computing and storage systems. Operating within a 2.7V to 3.6V supply range, this device is optimized for power efficiency while maintaining robust performance. The memory is organized as 16G x 8, making it ideal for systems requiring large-capacity, non-volatile storage. Although marked as Obsolete, it remains a reliable choice for legacy designs or applications where proven technology is preferred.

MT29F128G08AKCABH2-10ITZ:A Features

  • High Capacity: 128Gbit (16GB) storage in a single chip, reducing PCB footprint.
  • Fast Interface: Parallel memory interface with 100 MHz clock speed for rapid read/write operations.
  • Wide Voltage Range: Operates at 2.7V–3.6V, compatible with various system power designs.
  • Surface-Mount Packaging: 100TBGA package ensures compact integration in space-constrained designs.
  • Industrial Compliance: RoHS3 and REACH compliant, with MSL3 (168 hours) moisture sensitivity, suitable for extended storage.
  • Legacy Reliability: Despite being obsolete, it offers proven stability for long-term industrial applications.

MT29F128G08AKCABH2-10ITZ:A Applications

This NAND Flash memory is well-suited for:

  • Embedded Systems: High-capacity storage for industrial controllers, automation, and IoT devices.
  • Data Logging: Reliable non-volatile memory for recording large datasets in harsh environments.
  • Legacy Upgrades: Replacement or maintenance of older systems requiring parallel NAND Flash.
  • Networking Equipment: Buffer storage in routers, switches, and telecom infrastructure.
  • Automotive Electronics: Robust storage for infotainment and telemetry systems (where obsolescence is manageable).

Conclusion of MT29F128G08AKCABH2-10ITZ:A

The MT29F128G08AKCABH2-10ITZ:A provides a balance of high capacity, speed, and industrial durability, making it a strong candidate for legacy or specialized applications. While newer alternatives may offer advanced interfaces (e.g., NVMe, UFS), this parallel NAND Flash remains valuable for systems prioritizing proven technology, wide voltage tolerance, and high-density storage. Engineers should evaluate its obsolescence status but can leverage its reliability for long-lifecycle designs.

Tech Specifications

Clock Frequency
Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Memory Type
Product Status
Supplier Device Package
Series
Write Cycle Time - Word, Page
Memory Size
Package / Case
Technology
Voltage - Supply
REACH Status
Mfr
HTSUS
Package
Memory Format
RoHS Status
Base Product Number
Moisture Sensitivity Level (MSL)
Product
USHTS
RoHS

MT29F128G08AKCABH2-10ITZ:A Documents

Download datasheets and manufacturer documentation for MT29F128G08AKCABH2-10ITZ:A

Ersa Memory 24-May-2022       Tray 05-May-2022      

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