Micron Technology_MT29F2G08ABAEAH4:E TR

Micron Technology
MT29F2G08ABAEAH4:E TR  
Memory ICs Products

Micron Technology
MT29F2G08ABAEAH4:E TR
774-MT29F2G08ABAEAH4:E TR
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Micron Technology-MT29F2G08ABAEAH4:E TR-datasheets-4837842.pdf
IC FLASH 2GBIT PARALLEL 63VFBGA
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MT29F2G08ABAEAH4:E TR Description

MT29F2G08ABAEAH4:E TR Description

The MT29F2G08ABAEAH4:E TR is a high-performance flash memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This device features a 2Gbit memory size organized in a 256M x 8 configuration, offering substantial storage capacity in a compact form factor. The memory interface is parallel, ensuring fast data transfer rates and efficient communication with host systems. The IC operates within a supply voltage range of 2.7V to 3.6V and is rated for an operating temperature range of 0°C to 70°C (TA), making it suitable for a variety of industrial and consumer applications.

MT29F2G08ABAEAH4:E TR Features

  • Memory Size and Organization: The MT29F2G08ABAEAH4:E TR boasts a 2Gbit memory size with a 256M x 8 organization, providing ample storage for complex data sets and applications.
  • Parallel Memory Interface: The parallel interface ensures high-speed data transfer, making it ideal for applications requiring rapid access to large amounts of data.
  • Operating Temperature Range: The device operates reliably within a temperature range of 0°C to 70°C (TA), making it suitable for use in various environmental conditions.
  • Supply Voltage: The IC supports a supply voltage range of 2.7V to 3.6V, offering flexibility in power supply design.
  • Surface Mount Technology: The surface mount mounting type allows for efficient integration into modern printed circuit boards, reducing overall footprint and enhancing thermal performance.
  • Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the device is well-suited for manufacturing processes that require extended exposure to moisture.
  • Compliance and Standards: The MT29F2G08ABAEAH4:E TR is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and safety standards.
  • Packaging: The device is packaged in tape and reel (TR) format, facilitating automated assembly and handling processes.

MT29F2G08ABAEAH4:E TR Applications

The MT29F2G08ABAEAH4:E TR is ideal for a wide range of applications where high-density, non-volatile memory is required. Key applications include:

  • Embedded Systems: Ideal for embedded systems requiring reliable and high-speed storage solutions.
  • Consumer Electronics: Suitable for consumer devices such as smartphones, tablets, and gaming consoles where memory capacity and performance are critical.
  • Industrial Control Systems: Provides robust storage capabilities for industrial applications that demand high reliability and data integrity.
  • Automotive Electronics: The operating temperature range and moisture sensitivity level make it suitable for automotive applications where environmental conditions can be harsh.
  • Networking Equipment: Enhances the performance of networking devices by providing fast and reliable memory storage.

Conclusion of MT29F2G08ABAEAH4:E TR

The MT29F2G08ABAEAH4:E TR from Micron Technology Inc. stands out as a versatile and high-performance flash memory IC. Its 2Gbit memory size, parallel interface, and wide operating temperature range make it an excellent choice for a variety of applications. The device’s compliance with industry standards and its surface mount packaging further enhance its appeal for modern electronics manufacturing. Whether used in consumer electronics, industrial control systems, or automotive applications, the MT29F2G08ABAEAH4:E TR delivers reliable performance and significant storage capacity, making it a valuable component in any design.

Tech Specifications

Program Current (mA)
PPAP
Operating Current (mA)
Memory Type
Product Status
Automotive
Supplier Package
Chip Density (bit)
Package / Case
Timing Type
Technology
Voltage - Supply
REACH Status
Maximum Operating Supply Voltage (V)
EU RoHS
Sector Size
Moisture Sensitivity Level (MSL)
Operating Temperature
Number of Words
Memory Interface
Architecture
Block Organization
Minimum Endurance (Cycles)
ECCN
Memory Organization
Supplier Temperature Grade
Mounting Type
Standard Package Name
Cell Type
Pin Count
Mounting
Memory Size
Lead Shape
Typical Operating Supply Voltage (V)
HTSUS
Package
Programmability
PCB changed
HTS
ECCN (US)
Supplier Device Package
Command Compatible
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
Maximum Programming Time (ms)
Memory Format
Interface Type
Maximum Erase Time (s)
RoHS Status
Boot Block
Number of Bits/Word (bit)
ECC Support
Support of Page Mode
Page Size
Package Length
Address Width (bit)
Series
Write Cycle Time - Word, Page
Part Status
Package Width
Base Product Number
Minimum Operating Supply Voltage (V)
Mounting Style
Unit Weight
Organization
Data Bus Width
Product
Standard
Supply Current - Max
RoHS
Supply Voltage - Min
Minimum Operating Temperature
Active Read Current - Max
Type
Moisture Sensitive
Maximum Operating Temperature
Supply Voltage - Max
USHTS

MT29F2G08ABAEAH4:E TR Documents

Download datasheets and manufacturer documentation for MT29F2G08ABAEAH4:E TR

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