Micron Technology_MT29F2G08ABAEAWP:E TR

Micron Technology
MT29F2G08ABAEAWP:E TR  
Memory ICs Products

Micron Technology
MT29F2G08ABAEAWP:E TR
774-MT29F2G08ABAEAWP:E TR
Ersa
Micron Technology-MT29F2G08ABAEAWP:E TR-datasheets-3415339.pdf
IC FLASH 2GBIT PARALLEL 48TSOP I
In Stock : 4666

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MT29F2G08ABAEAWP:E TR Description

MT29F2G08ABAEAWP:E TR Description

The MT29F2G08ABAEAWP:E TR is a high-performance, 2Gbit Flash memory IC chip manufactured by Micron Technology Inc. This device is designed for a wide range of applications requiring reliable and efficient data storage solutions. The MT29F2G08ABAEAWP:E TR features a parallel memory interface, providing fast data transfer rates and ensuring compatibility with various systems. It is packaged in a 48TSOP format, making it suitable for surface mount applications and ensuring robustness in diverse operating environments.

MT29F2G08ABAEAWP:E TR Features

  • Memory Size and Organization: The MT29F2G08ABAEAWP:E TR offers a substantial 2Gbit memory size, organized in a 256M x 8 configuration. This large memory capacity allows for extensive data storage capabilities, making it ideal for applications requiring significant storage space.
  • Operating Temperature: With an operating temperature range of 0°C to 70°C (TA), this memory IC is designed to perform reliably in a variety of ambient conditions, ensuring stability and durability in both standard and moderately elevated temperature environments.
  • Voltage Supply: The device operates within a voltage supply range of 2.7V to 3.6V, providing flexibility and compatibility with different power supply systems.
  • Moisture Sensitivity Level (MSL): The MT29F2G08ABAEAWP:E TR has an MSL of 3 (168 Hours), indicating its resistance to moisture and suitability for use in environments with varying humidity levels.
  • Compliance and Standards: The MT29F2G08ABAEAWP:E TR is REACH Unaffected and RoHS3 Compliant, ensuring it meets stringent environmental and safety regulations. It also carries an ECCN of 3A991B1A, indicating its classification under export control regulations.
  • Packaging: The device is available in a Tape & Reel (TR) package, facilitating easy handling and integration into automated assembly processes.

MT29F2G08ABAEAWP:E TR Applications

The MT29F2G08ABAEAWP:E TR is well-suited for a variety of applications where high-density, non-volatile memory storage is required. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems in consumer electronics, automotive, and industrial applications where reliable data storage and quick access are crucial.
  • Networking Equipment: Suitable for networking devices such as routers and switches, where fast data retrieval and storage are essential for efficient operation.
  • Consumer Electronics: Perfect for devices like digital cameras, media players, and smart TVs, where large amounts of data need to be stored and accessed quickly.
  • Industrial Control Systems: Beneficial in industrial control systems where data integrity and robustness are paramount, ensuring consistent performance in harsh environments.

Conclusion of MT29F2G08ABAEAWP:E TR

The MT29F2G08ABAEAWP:E TR from Micron Technology Inc. stands out as a reliable and high-performance Flash memory solution. Its large memory capacity, robust operating temperature range, and compatibility with various voltage supplies make it a versatile choice for a wide range of applications. The device's compliance with environmental and safety standards further enhances its appeal in the electronics industry. Whether used in embedded systems, networking equipment, consumer electronics, or industrial control systems, the MT29F2G08ABAEAWP:E TR offers a dependable and efficient storage solution that meets the demands of modern electronic devices.

Tech Specifications

Program Current (mA)
PPAP
Operating Current (mA)
Memory Type
Product Status
Automotive
Supplier Package
Chip Density (bit)
Package / Case
Timing Type
Technology
Voltage - Supply
REACH Status
Maximum Operating Supply Voltage (V)
EU RoHS
Sector Size
Moisture Sensitivity Level (MSL)
Operating Temperature
Number of Words
Memory Interface
Architecture
Block Organization
Minimum Endurance (Cycles)
ECCN
Memory Organization
Supplier Temperature Grade
Mounting Type
Standard Package Name
Cell Type
Pin Count
Mounting
Memory Size
Lead Shape
Typical Operating Supply Voltage (V)
HTSUS
Package
Programmability
PCB changed
HTS
ECCN (US)
Supplier Device Package
Command Compatible
Address Bus Width (bit)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
Maximum Programming Time (ms)
Memory Format
Interface Type
Maximum Erase Time (s)
RoHS Status
Boot Block
Number of Bits/Word (bit)
ECC Support
Support of Page Mode
Page Size
Package Length
Series
Write Cycle Time - Word, Page
Part Status
Package Width
Base Product Number
Minimum Operating Supply Voltage (V)
Mounting Style
Unit Weight
Organization
Data Bus Width
Product
Standard
Supply Current - Max
RoHS
Supply Voltage - Min
Minimum Operating Temperature
Active Read Current - Max
Type
Moisture Sensitive
Maximum Operating Temperature
Supply Voltage - Max
USHTS

MT29F2G08ABAEAWP:E TR Documents

Download datasheets and manufacturer documentation for MT29F2G08ABAEAWP:E TR

Ersa Memory 24-May-2022      

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