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MT40A1G8WE-083E AIT:B TR

MT40A1G8WE-083E AIT:B TR Description

The MT40A1G8WE-083E AIT:B TR is a high-performance Dynamic Random Access Memory (DRAM) integrated circuit (IC) designed by Micron Technology Inc. This 8Gbit memory device is organized as 1G x 8 and operates at a clock frequency of 1.2 GHz. It features a parallel memory interface, making it suitable for applications requiring high-speed data transfer and processing. The memory is volatile, meaning it retains data only while power is supplied. The MT40A1G8WE-083E AIT:B TR is packaged in a 78-ball Fine Ball Grid Array (FBGA) and is available in tape and reel format, facilitating surface mount assembly processes. It operates within a supply voltage range of 1.14V to 1.26V, ensuring compatibility with modern low-power systems. Despite its obsolescence, the MT40A1G8WE-083E AIT:B TR remains a reliable choice for specific legacy applications.

MT40A1G8WE-083E AIT:B TR Features

• High-Speed Performance: With a clock frequency of 1.2 GHz, the MT40A1G8WE-083E AIT:B TR delivers rapid data access and transfer rates, essential for high-performance computing and data-intensive applications.
• Parallel Interface: The parallel memory interface ensures efficient data communication with the host system, optimizing throughput and reducing latency.
• Volatile Memory: As a DRAM device, it provides fast read/write capabilities, making it ideal for temporary data storage and processing tasks.
• Low-Power Operation: The supply voltage range of 1.14V to 1.26V supports energy-efficient operation, aligning with modern power-conscious designs.
• Surface Mount Compatibility: The surface mount technology (SMT) package allows for easy integration into compact and high-density PCB designs.
• Compliance and Safety: The MT40A1G8WE-083E AIT:B TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards for electronics manufacturing.
• Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the device is suitable for standard manufacturing processes without requiring special handling for moisture sensitivity.

MT40A1G8WE-083E AIT:B TR Applications

The MT40A1G8WE-083E AIT:B TR is well-suited for a variety of applications where high-speed, volatile memory is required. Key use cases include:

• Networking Equipment: Routers and switches benefit from the fast data access capabilities of the MT40A1G8WE-083E AIT:B TR, enabling efficient packet processing and buffering.
• Telecommunications: Base stations and other telecom infrastructure can leverage the device's high-speed performance for real-time data handling and signal processing.
• Embedded Systems: Industrial control systems and embedded computing platforms can utilize the MT40A1G8WE-083E AIT:B TR for temporary data storage and high-speed processing tasks.
• Legacy Systems: Despite its obsolescence, the MT40A1G8WE-083E AIT:B TR remains a viable option for maintaining and upgrading legacy systems that rely on this specific memory configuration.

Conclusion of MT40A1G8WE-083E AIT:B TR

The MT40A1G8WE-083E AIT:B TR from Micron Technology Inc. is a robust and reliable DRAM IC, offering high-speed performance and compatibility with modern low-power systems. Its parallel interface and volatile memory characteristics make it an excellent choice for applications requiring rapid data processing and temporary storage. Although it is now obsolete, the MT40A1G8WE-083E AIT:B TR continues to provide value in specific legacy and embedded applications. Its compliance with environmental and safety standards ensures it remains a viable option for electronics manufacturers.