MT40A4G4VA-062E:B Description
The MT40A4G4VA-062E:B is a high-performance DRAM memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This 16Gbit DRAM device is organized as 4G x 4 and features a parallel memory interface, making it ideal for applications requiring high-speed data access and processing. The IC operates within a voltage range of 1.14V to 1.26V and supports a clock frequency of 1.6 GHz, ensuring efficient and reliable performance. With an access time of 19 ns and a write cycle time of 15 ns for word and page operations, the MT40A4G4VA-062E:B delivers exceptional speed and responsiveness.
MT40A4G4VA-062E:B Features
- High-Speed Performance: The MT40A4G4VA-062E:B boasts a clock frequency of 1.6 GHz, enabling rapid data processing and transfer. This high-speed capability is complemented by an access time of 19 ns and a write cycle time of 15 ns, making it suitable for demanding applications that require quick data access and modification.
- Robust Memory Organization: The device is organized as 4G x 4, providing a total memory size of 16Gbit. This configuration ensures efficient use of memory space and supports large-scale data storage and retrieval.
- Wide Operating Temperature Range: The MT40A4G4VA-062E:B operates reliably within a temperature range of 0°C to 95°C (TC), making it suitable for a variety of industrial and commercial environments.
- Surface Mount Technology: The IC is designed for surface mount applications, facilitating easy integration into compact and high-density electronic systems.
- Compliance and Standards: The MT40A4G4VA-062E:B is ROHS3 compliant, ensuring it meets the latest environmental and safety standards. It also adheres to the EAR99 ECCN classification and falls under the HTSUS code 8542.32.0036.
- Moisture Sensitivity Level: With an MSL rating of 3 (168 Hours), the IC is well-suited for environments with varying humidity levels, ensuring long-term reliability and performance.
MT40A4G4VA-062E:B Applications
The MT40A4G4VA-062E:B is ideal for a range of applications that demand high-speed, high-density memory solutions. Its robust performance and compact design make it suitable for:
- Networking Equipment: High-speed routers, switches, and other networking devices that require rapid data processing and storage.
- Telecommunications: Base stations, wireless access points, and other telecommunication infrastructure that need reliable and efficient memory solutions.
- Industrial Control Systems: Automated manufacturing systems, PLCs, and other industrial control applications that demand high-speed data access and processing.
- Consumer Electronics: High-performance gaming consoles, multimedia devices, and other consumer electronics that require fast and reliable memory.
Conclusion of MT40A4G4VA-062E:B
The MT40A4G4VA-062E:B from Micron Technology Inc. is a high-performance DRAM memory IC that offers exceptional speed, reliability, and versatility. Its 1.6 GHz clock frequency, 19 ns access time, and 15 ns write cycle time make it an ideal choice for applications requiring rapid data processing and transfer. The device's wide operating temperature range, surface mount design, and compliance with industry standards further enhance its suitability for a variety of industrial and commercial applications. While the product is now obsolete, its legacy continues to influence the design and development of modern memory solutions.
MT40A4G4VA-062E:B Documents
Download datasheets and manufacturer documentation for MT40A4G4VA-062E:B