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MT41K512M8DA-107:P TR

MT41K512M8DA-107:P TR Description

The MT41K512M8DA-107:P TR is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This 4Gbit memory device is designed to offer robust performance and reliability in a compact 78FBGA package, making it suitable for a wide range of applications. The MT41K512M8DA-107:P TR features a memory organization of 512M x 8, providing a substantial amount of storage capacity in a parallel memory interface format. It operates within a supply voltage range of 1.283V to 1.45V and has an access time of 20 ns, ensuring fast data retrieval and processing capabilities. The device supports a clock frequency of 933 MHz, which enhances its overall performance and efficiency.

MT41K512M8DA-107:P TR Features

• High Memory Density: With a memory size of 4Gbit, the MT41K512M8DA-107:P TR provides significant storage capacity in a small form factor, making it ideal for applications where space is a constraint.
• Fast Access Time: The 20 ns access time ensures rapid data retrieval, which is crucial for applications requiring high-speed data processing.
• Wide Operating Voltage Range: The device operates within a voltage range of 1.283V to 1.45V, offering flexibility and compatibility with various power supply systems.
• High Clock Frequency: The 933 MHz clock frequency enhances the performance of the memory, enabling faster data transfer and processing.
• Volatile Memory: As a DRAM device, it provides volatile memory storage, which is essential for applications requiring dynamic data handling.
• Surface Mount Technology: The surface mount mounting type ensures easy integration into modern PCB designs, facilitating compact and efficient system layouts.
• Moisture Sensitivity Level (MSL) 3: The MSL 3 rating (168 hours) ensures the device is protected against moisture, making it suitable for a variety of environmental conditions.
• Compliance and Safety: The MT41K512M8DA-107:P TR is REACH unaffected and ROHS3 compliant, ensuring it meets the latest environmental and safety standards.
• Extended Operating Temperature Range: The device operates within a temperature range of 0°C to 95°C, making it suitable for applications in both standard and harsh environments.
• Tape & Reel Packaging: The Tape & Reel (TR) packaging format ensures efficient handling and placement during manufacturing processes.

MT41K512M8DA-107:P TR Applications

The MT41K512M8DA-107:P TR is well-suited for a variety of applications that require high-speed, high-density memory solutions. Some specific use cases include:

• Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and storage.
• Telecommunications: Suitable for base stations, repeaters, and other telecommunication infrastructure that demand reliable and high-performance memory.
• Industrial Automation: Applicable in programmable logic controllers (PLCs), industrial PCs, and other automation systems where robust memory solutions are essential.
• Consumer Electronics: Perfect for gaming consoles, high-end multimedia devices, and other consumer electronics that require efficient data handling.
• Embedded Systems: Useful in embedded systems where compact size and high performance are critical.

Conclusion of MT41K512M8DA-107:P TR

The MT41K512M8DA-107:P TR from Micron Technology Inc. is a versatile and high-performance DRAM memory IC chip that offers significant benefits over similar models. Its high memory density, fast access time, and wide operating voltage range make it an excellent choice for applications requiring dynamic and efficient data handling. The device's compliance with environmental and safety standards, along with its extended operating temperature range and moisture sensitivity protection, ensures reliability and durability in various conditions. Whether used in networking equipment, telecommunications, industrial automation, consumer electronics, or embedded systems, the MT41K512M8DA-107:P TR provides a reliable and high-performance memory solution that meets the demands of modern electronic systems.