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MT44K32M36RB-107E:A

MT44K32M36RB-107E:A Description

The MT44K32M36RB-107E:A is a high-performance 1.125Gbit (32M x 36) RLDRAM 3 volatile memory IC from Micron Technology Inc., designed for applications demanding low-latency, high-bandwidth memory solutions. Operating at a 933 MHz clock frequency with an 8 ns access time, this DRAM module delivers exceptional speed and efficiency. It features a parallel memory interface and operates within a 1.28V to 1.42V supply voltage range, ensuring power efficiency in high-performance systems. The device is housed in a 168-ball BGA package, making it suitable for surface-mount applications in rugged environments, with an operating temperature range of 0°C to 95°C (TC).

MT44K32M36RB-107E:A Features

• RLDRAM 3 Technology: Optimized for high-speed, low-latency applications, outperforming standard DDR solutions.
• High Bandwidth: 933 MHz clock frequency enables rapid data transfer for compute-intensive tasks.
• Low Access Time: 8 ns access time ensures minimal delay in critical operations.
• Wide Voltage Range: 1.28V–1.42V operation balances performance and power efficiency.
• Robust Packaging: 168BGA tray packaging ensures durability and compatibility with automated assembly processes.
• Compliance: ROHS3 and REACH compliant, meeting global environmental standards.
• Memory Organization: 32M x 36 configuration provides flexible data handling for high-throughput systems.

MT44K32M36RB-107E:A Applications

This memory IC is ideal for:

• Networking Equipment: High-speed routers, switches, and line cards requiring low-latency memory.
• Telecommunications: Base stations and signal processing units needing reliable, high-bandwidth memory.
• Data Centers: Server accelerators and storage systems where fast access times are critical.
• Military/Aerospace: Ruggedized systems demanding stable performance under extreme conditions.
• Test & Measurement: High-precision instruments requiring rapid data processing.

Conclusion of MT44K32M36RB-107E:A

The MT44K32M36RB-107E:A stands out as a high-performance RLDRAM 3 solution, combining speed, efficiency, and reliability for advanced electronic systems. Its low-latency architecture, wide operating temperature range, and compliance with industry standards make it a preferred choice for networking, telecom, and data center applications. For engineers seeking a scalable, high-bandwidth memory IC, this Micron product offers a compelling balance of performance and power efficiency.