Micron Technology Tariff Inquiry

MT49H16M36SJ-18:B

MT49H16M36SJ-18:B Description

The MT49H16M36SJ-18:B is a high-performance 576Mbit (16M x 36) volatile DRAM from Micron Technology Inc., designed for demanding applications requiring fast, parallel data access. Operating at a 533 MHz clock frequency with a 15 ns access time, it delivers high-speed data throughput, making it ideal for memory-intensive systems. The device features a 1.7V–1.9V supply voltage, ensuring low power consumption while maintaining robust performance. Packaged in a 144FBGA tray, it supports surface-mount assembly and is rated for 0°C to 95°C (TC) operation, suitable for industrial and commercial environments.

MT49H16M36SJ-18:B Features

• High-Speed Performance: 533 MHz clock frequency and 15 ns access time for rapid data processing.
• Large Memory Capacity: 576Mbit (16M x 36) organization optimizes bandwidth for wide data buses.
• Low Power Operation: 1.7V–1.9V supply range reduces energy consumption in power-sensitive designs.
• Robust Packaging: 144FBGA ensures reliable surface-mount integration in compact PCB layouts.
• Industrial Reliability: 0°C to 95°C (TC) operating range and MSL 3 (168 hours) moisture sensitivity for harsh environments.
• Compliance: ROHS3 and REACH Unaffected, meeting global environmental standards.

MT49H16M36SJ-18:B Applications

This DRAM excels in applications requiring high bandwidth and low latency, including:

• Networking Equipment: Routers, switches, and base stations leveraging parallel memory interfaces.
• Industrial Automation: Real-time control systems and high-speed data acquisition.
• Embedded Computing: Military, aerospace, and medical devices demanding reliability and performance.
• Telecommunications: 5G infrastructure and signal processing units.
• Data Storage: Cache memory for SSDs and RAID controllers.

Conclusion of MT49H16M36SJ-18:B

The MT49H16M36SJ-18:B stands out for its high-speed operation, large memory density, and industrial-grade durability, making it a top choice for advanced electronic systems. Its low-voltage design and compliance with environmental standards further enhance its suitability for modern, energy-efficient applications. Engineers seeking a high-performance parallel DRAM with proven reliability will find this Micron solution ideal for cutting-edge designs.