The MT53E256M32D2DS-053 AUT:B TR is a high-performance DRAM memory IC chip designed for automotive applications. Manufactured by Micron Technology Inc., this device offers a memory size of 8 Gbit, organized as 256M x 32. It operates at a clock frequency of 1.866 GHz, ensuring fast data access and processing speeds. The memory type is volatile, meaning it requires a constant power supply to retain data, which is typical for DRAM devices. The chip is designed to operate at a supply voltage of 1.1V, making it energy-efficient and suitable for applications where power consumption is a critical factor.
This memory IC is packaged in a 200-ball fine-pitch BGA (200WFBGA) and is available in a tape and reel format (TR), which is ideal for surface mount assembly processes. The product is classified under the automotive grade, ensuring it meets the stringent reliability and performance standards required for use in vehicles. The moisture sensitivity level (MSL) is rated at 3 (168 hours), indicating its robustness against moisture exposure during the manufacturing process.
The MT53E256M32D2DS-053 AUT:B TR is ideal for a range of automotive applications where high-speed memory and reliability are crucial. Specific use cases include:
The MT53E256M32D2DS-053 AUT:B TR from Micron Technology Inc. is a high-performance DRAM memory IC chip designed specifically for automotive applications. Its high clock frequency, automotive grade certification, and energy-efficient operation make it a superior choice for applications requiring fast data processing and reliability. The device's compliance with environmental and safety regulations further enhances its suitability for modern automotive systems. Whether used in ADAS, infotainment systems, telematics, or ECUs, the MT53E256M32D2DS-053 AUT:B TR provides a robust and efficient memory solution.
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