Micron Technology_MT53E512M64D4NW-046 IT:E
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Micron Technology
MT53E512M64D4NW-046 IT:E

774-MT53E512M64D4NW-046 IT:E
IC DRAM 32GBIT 2.133GHZ 432VFBGA

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Tech Specifications

Clock Frequency
2.133 GHz
Part Status Code
Obsolete
Tape & Reel Qty
1500
Component Density
32Gb
I/O Voltage
1.1/0.6 VOLTS
Number of Components
4
Memory Type
Volatile
Product Status
Obsolete
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MT53E512M64D4NW-046 IT:E Description

MT53E512M64D4NW-046 IT:E Description

The MT53E512M64D4NW-046 IT:E is a high-performance memory IC chip designed by Micron Technology Inc. This IC is a 32Gbit DRAM device with a memory organization of 512M x 64, providing substantial storage capacity in a compact form factor. It operates at a clock frequency of 2.133 GHz, ensuring high-speed data processing capabilities. The IC is packaged in a 432 VFBGA format, making it suitable for surface mount applications. It is powered by a 1.1V supply voltage and is compliant with ROHS3 standards, ensuring environmental sustainability. The product is available in a tray package and has a moisture sensitivity level (MSL) of 3, allowing for 168 hours of exposure before assembly.

MT53E512M64D4NW-046 IT:E Features

  • High Memory Capacity: With a memory size of 32Gbit, the MT53E512M64D4NW-046 IT:E offers significant storage capabilities, making it ideal for applications requiring large data sets.
  • Fast Data Processing: The clock frequency of 2.133 GHz ensures rapid data transfer and processing, enhancing overall system performance.
  • Volatile Memory: As a DRAM device, it provides volatile memory, which is essential for applications that require frequent data updates and high-speed access.
  • Surface Mount Technology: The surface mount mounting type allows for efficient integration into modern electronic systems, reducing the overall footprint and enhancing reliability.
  • Low Power Consumption: The 1.1V supply voltage contributes to low power consumption, making it suitable for energy-efficient designs.
  • Environmental Compliance: The ROHS3 compliance ensures that the product meets stringent environmental standards, making it suitable for environmentally conscious applications.
  • Moisture Sensitivity Level: The MSL of 3 (168 hours) provides flexibility in manufacturing processes, allowing for extended exposure times before assembly.

MT53E512M64D4NW-046 IT:E Applications

The MT53E512M64D4NW-046 IT:E is ideal for a variety of applications that require high-speed, high-capacity memory solutions. Some specific use cases include:

  • High-Performance Computing: Ideal for servers and data centers that require rapid data processing and large memory capacity.
  • Telecommunications: Suitable for networking equipment and infrastructure that demand high-speed data transfer and storage.
  • Consumer Electronics: Applicable in high-end gaming consoles, multimedia devices, and smart TVs where fast memory access is crucial.
  • Industrial Automation: Useful in industrial control systems and IoT devices that require reliable and fast memory solutions.
  • Medical Equipment: Appropriate for medical imaging and diagnostic devices that need high-speed data processing and storage.

Conclusion of MT53E512M64D4NW-046 IT:E

The MT53E512M64D4NW-046 IT:E is a robust and high-performance memory IC chip that offers significant advantages over similar models. Its high memory capacity, fast clock frequency, and low power consumption make it an ideal choice for applications requiring high-speed data processing and large storage capabilities. The surface mount technology and ROHS3 compliance ensure that it is suitable for modern, environmentally conscious designs. Despite being marked as obsolete, the MT53E512M64D4NW-046 IT:E remains a reliable and efficient solution for various high-performance applications.

FAQ

What voltage specification is listed for MT53E512M64D4NW-046 IT:E?
The listed voltage-related specification for MT53E512M64D4NW-046 IT:E is 1.1V.
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What is the mounting type of MT53E512M64D4NW-046 IT:E?
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