Micron Technology_MT55L256L18P1F-10

Micron Technology
MT55L256L18P1F-10  
Memory ICs Products

Micron Technology
MT55L256L18P1F-10
774-MT55L256L18P1F-10
Ersa
Micron Technology-MT55L256L18P1F-10-datasheets-3190527.pdf
IC SRAM 4MBIT PAR 165FBGA
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MT55L256L18P1F-10 Description

MT55L256L18P1F-1F Description

The MT55L256L18P1F-10 is a high-performance Static Random Access Memory (SRAM) IC from Micron Technology Inc., designed for demanding applications requiring fast access times and reliable data storage. This 4Mbit memory device is organized as 25K6 x 18, offering a substantial amount of storage capacity in a compact form factor. The MT55L256L18P1F-10 features a parallel memory interface, ensuring compatibility with a wide range of systems and applications.

MT55L256L18P1F-10 Features

  • Fast Access Time: With an access time of just 5 nanoseconds, the MT55L256L18P1F-10 delivers rapid data retrieval, making it ideal for high-speed processing applications.
  • Wide Operating Temperature Range: The device operates reliably within a temperature range of 0°C to 70°C (TA), ensuring stable performance in various environmental conditions.
  • Volatile Memory: As a volatile memory type, the MT55L256L18P1F-10 retains data only while power is supplied, providing fast read/write speeds and low power consumption.
  • Surface Mount Technology: The surface mount mounting type allows for easy integration into modern circuit boards, reducing the overall footprint and enhancing thermal performance.
  • Power Supply Voltage: The MT55L256L18P1F-10 operates within a voltage range of 3.135V to 3.465V, ensuring compatibility with a variety of power supply systems.
  • Moisture Sensitivity Level: With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), the device is well-suited for manufacturing processes involving reflow soldering.
  • ECCN HT andSUS: The MT55L256L18P1F-10 is classified under ECCN 3A991B2A and HTSUS 8542.32.0041, ensuring compliance with international export regulations.

MT55L256L18P1F-10 Applications

The MT55L256L18P1F-10 is ideal for a variety of applications where fast data access and reliable storage are critical. Some specific use cases include:

  • Networking Equipment: High-speed routers and switches require rapid data access to handle large volumes of network traffic efficiently.
  • Industrial Control Systems: Real-time control systems benefit from the fast access times and reliable data storage provided by the MT55L256L18P1F-10.
  • Telecommunications: Base stations and other telecom equipment require fast and reliable memory to manage data transmission and processing.
  • Automotive Systems: Advanced driver assistance systems (ADAS) and infotainment systems in vehicles can leverage the MT55L256L18P1F-10 for fast data retrieval and processing.

Conclusion of MT55L256L18P1F-10

The MT55L256L18P1F-10 from Micron Technology Inc. stands out as a robust and reliable SRAM solution for applications requiring high-speed data access and reliable storage. Its fast access time, wide operating temperature range, and surface mount technology make it a versatile choice for a variety of industries. The device's compliance with international regulations ensures ease of integration into global supply chains. Whether used in networking equipment, industrial control systems, telecommunications, or automotive applications, the MT55L256L18P1F-10 delivers exceptional performance and reliability, making it a preferred choice for engineers and designers.

Tech Specifications

Clock Frequency
Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Memory Type
Product Status
Supplier Device Package
Series
Access Time
Write Cycle Time - Word, Page
Memory Size
Package / Case
Technology
Voltage - Supply
REACH Status
Mfr
HTSUS
Package
Memory Format
RoHS Status
Moisture Sensitivity Level (MSL)

MT55L256L18P1F-10 Documents

Download datasheets and manufacturer documentation for MT55L256L18P1F-10

Ersa MT55L256L18P1T-7.5IT      

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