Micron Technology
MT58L128L36F1T-8.5  
Memory ICs Products

Micron Technology
MT58L128L36F1T-8.5
774-MT58L128L36F1T-8.5
Ersa
Micron Technology-MT58L128L36F1T-8.5-datasheets-544203.pdf
IC SRAM 4MBIT PAR 100TQFP
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MT58L128L36F1T-8.5 Description

MT58L128L36F1T-8.5 Description

The MT58L128L36F1T-8.5 is a high-performance, synchronous burst static random access memory (SRAM) IC, designed for demanding applications requiring fast access times and reliable data storage. Manufactured by Micron Technology Inc., this IC features a 128K x 36 memory organization, providing a total memory size of 4 Mbit. It operates within a voltage range of 3.135V to 3.6V and supports a clock frequency of 100 MHz, ensuring efficient and rapid data processing.

The MT58L128L36F1T-8.5 is housed in a surface-mount 100TQFP package, making it suitable for compact and space-constrained designs. It operates within an industrial temperature range of 0°C to 70°C (TA), making it ideal for a variety of applications in different environmental conditions. The memory interface is parallel, facilitating straightforward integration with existing systems.

MT58L128L36F1T-8.5 Features

  • Fast Access Time: With an access time of 8.5 ns, the MT58L128L36F1T-8.5 ensures rapid data retrieval, making it suitable for high-speed applications.
  • Synchronous Burst Mode: The SYNCBURST™ series feature allows for burst data transfers, enhancing overall system performance and efficiency.
  • Volatile Memory: As a volatile SRAM, provides it quick read and write capabilities, essential for applications requiring frequent data updates.
  • Wide Operating Voltage Range: The 3.135V to 3.6V supply voltage range offers flexibility in power supply design.
  • Moisture Sensitivity Level: MSL 3 (168 hours) ensures the IC can withstand moisture exposure during manufacturing processes.
  • ECCN Classification: Classified under ECCN 3A991B2A, this IC complies with international export regulations.
  • REACH Status: Vendor-defined status ensures compliance with environmental and chemical regulations.

MT58L128L36F1T-8.5 Applications

The MT58L128L36F1T-8.5 is ideal for a range of applications where high-speed data access and reliable memory performance are critical. Key applications include:

  • Telecommunications: High-speed data buffering and temporary storage in routers and switches.
  • Industrial Control Systems: Real-time data processing and control in automation and robotics.
  • Consumer Electronics: Fast memory access for digital cameras, gaming consoles, and high-end multimedia devices.
  • Networking Equipment: Efficient data handling in network interface cards and other communication devices.
  • Embedded Systems: Reliable memory solution for embedded processors and microcontrollers.

Conclusion of MT58L128L36F1T-8.5

The MT58L128L36F1T-8.5 is a robust and versatile SRAM IC, offering exceptional performance and reliability. Its fast access time, synchronous burst mode, and wide operating voltage range make it a standout choice for applications requiring high-speed data processing and storage. The surface-mount package and industrial temperature range further enhance its suitability for a variety of environments. For designers and engineers seeking a high-performance memory solution, the MT58L128L36F1T-8.5 from Micron Technology Inc. is an excellent choice.

Tech Specifications

Clock Frequency
Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Memory Type
Product Status
Supplier Device Package
Series
Access Time
Write Cycle Time - Word, Page
Memory Size
Package / Case
Technology
Voltage - Supply
REACH Status
Mfr
HTSUS
Package
Memory Format
RoHS Status
Moisture Sensitivity Level (MSL)

MT58L128L36F1T-8.5 Documents

Download datasheets and manufacturer documentation for MT58L128L36F1T-8.5

Ersa MT58L256V18F1T-10      

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