The MT58L128L36F1T-8.5 is a high-performance, synchronous burst static random access memory (SRAM) IC, designed for demanding applications requiring fast access times and reliable data storage. Manufactured by Micron Technology Inc., this IC features a 128K x 36 memory organization, providing a total memory size of 4 Mbit. It operates within a voltage range of 3.135V to 3.6V and supports a clock frequency of 100 MHz, ensuring efficient and rapid data processing.
The MT58L128L36F1T-8.5 is housed in a surface-mount 100TQFP package, making it suitable for compact and space-constrained designs. It operates within an industrial temperature range of 0°C to 70°C (TA), making it ideal for a variety of applications in different environmental conditions. The memory interface is parallel, facilitating straightforward integration with existing systems.
The MT58L128L36F1T-8.5 is ideal for a range of applications where high-speed data access and reliable memory performance are critical. Key applications include:
The MT58L128L36F1T-8.5 is a robust and versatile SRAM IC, offering exceptional performance and reliability. Its fast access time, synchronous burst mode, and wide operating voltage range make it a standout choice for applications requiring high-speed data processing and storage. The surface-mount package and industrial temperature range further enhance its suitability for a variety of environments. For designers and engineers seeking a high-performance memory solution, the MT58L128L36F1T-8.5 from Micron Technology Inc. is an excellent choice.
Download datasheets and manufacturer documentation for MT58L128L36F1T-8.5