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MT58L256L18F1T-10
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MT58L256L18F1T-10 Description
MT58L256L18F1T-10 Description
The MT58L256L18F1T-10 is a high-performance synchronous burst static random-access memory (SRAM) IC designed by Micron Technology Inc. This memory IC chip features a 256K x 18 memory organization, providing a total memory size of 4 Mbit. It operates with a clock frequency of 66 MHz and an access time of 10 ns, ensuring rapid data retrieval and processing. The memory interface is parallel, which is ideal for applications requiring high-speed data transfer and low latency.
The MT58L256L18F1T-10 is designed for surface mount technology, making it suitable for modern, compact electronic designs. It operates within a voltage range of 3.135V to 3.6V and is rated for an operating temperature range of 0°C to 70°C (TA). This memory IC is part of the SYNCBURST™ series, known for its efficient burst mode operation, which enhances data throughput and overall system performance.
MT58L256L18F1T-10 Features
- High-Speed Performance: With a clock frequency of 66 MHz and an access time of 10 ns, the MT58L256L18F1T-10 offers rapid data access, making it suitable for high-speed applications.
- Parallel Memory Interface: The parallel interface ensures efficient data transfer, reducing latency and improving system responsiveness.
- Volatile Memory: As a volatile SRAM, it provides fast read/write capabilities, essential for applications requiring quick data access and modification.
- Surface Mount Technology: The surface mount design allows for compact and reliable integration into modern electronic systems.
- Wide Operating Voltage Range: The 3.135V to 3.6V supply voltage range ensures compatibility with various power supply configurations.
- Extended Temperature Range: The operating temperature range of 0°C to 70°C (TA) makes it suitable for a variety of environmental conditions.
- SYNCBURST™ Series: Part of the SYNCBURST™ series, this IC benefits from advanced burst mode operation, enhancing data throughput and overall system efficiency.
- Moisture Sensitivity Level (MSL) 3: With an MSL of 3 (168 hours), the MT58L256L18F1T-10 is designed to withstand typical manufacturing environments, ensuring reliability during assembly processes.
MT58L256L18F1T-10 Applications
The MT58L256L18F1T-10 is ideal for applications that require high-speed, low-latency memory solutions. Some specific use cases include:
- Networking Equipment: Ideal for routers, switches, and other networking devices where rapid data access and transfer are critical.
- Telecommunications: Suitable for base stations and communication systems that demand high-speed data processing and low latency.
- Industrial Control Systems: Applicable in industrial automation and control systems where quick data retrieval and processing are essential.
- Consumer Electronics: Suitable for high-performance consumer devices such as gaming consoles, multimedia players, and advanced set-top boxes.
- Embedded Systems: Ideal for embedded systems in automotive, aerospace, and other industries where reliability and performance are paramount.
Conclusion of MT58L256L18F1T-10
The MT58L256L18F1T-10 from Micron Technology Inc. is a robust and high-performance SRAM IC designed to meet the demands of modern electronic systems. Its combination of high-speed operation, parallel memory interface, and SYNCBURST™ technology makes it a superior choice for applications requiring rapid data access and processing. The wide operating voltage range, extended temperature range, and surface mount design further enhance its versatility and reliability. Whether used in networking equipment, telecommunications, industrial control systems, consumer electronics, or embedded systems, the MT58L256L18F1T-10 delivers exceptional performance and reliability, making it a standout choice in the memory IC market.



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