Micron Technology_MT58L512L18DT-7.5

Micron Technology
MT58L512L18DT-7.5  
Memory ICs Products

Micron Technology
MT58L512L18DT-7.5
774-MT58L512L18DT-7.5
Ersa
Micron Technology-MT58L512L18DT-7.5-datasheets-2383467.pdf
IC SRAM 8MBIT PARALLEL 100TQFP
In Stock : 6325

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MT58L512L18DT-7.5 Description

MT58L512L18DT-7.5 Description

The MT58L512L18DT-7.5 is a high-performance Synchronous Burst Static Random Access Memory (SRAM) IC designed by Micron Technology Inc. This memory chip offers a robust solution for applications requiring fast access times and reliable data storage. The MT58L512L18DT-7.5 features a memory organization of 512K x 18, providing a total memory size of 8 Mbit. It operates within a supply voltage range of 3.135V to 3.6V and supports a clock frequency of 133 MHz. The chip is housed in a surface-mount 100TQFP package, making it suitable for compact and high-density designs.

MT58L512L18DT-7.5 Features

  • High-Speed Performance: With an access time of 4 ns and a clock frequency of 133 MHz, the MT58L512L18DT-7.5 ensures rapid data retrieval and processing, making it ideal for high-speed applications.
  • Parallel Memory Interface: The parallel memory interface allows for efficient data transfer, enhancing system performance and throughput.
    -Wide Operating Temperature Range: The chip operates reliably within a temperature range of 0°C to 70°C (TA), making it suitable for a variety of environmental conditions.
  • Volatile Memory Type: As a volatile memory, the MT58L512L18DT-7.5 retains data as long as power is supplied, ensuring quick access and low latency.
  • Enhanced Reliability: The MT58L512L18DT-7.5 is designed with a moisture sensitivity level (MSL) of 3, allowing for 168 hours of exposure before reflow soldering, which enhances its reliability in manufacturing processes.
  • Compliance and Safety: The chip is REACH unaffected and adheres to the ECCN classification 3A991B2A, ensuring compliance with international regulations and safety standards.

MT58L512L18DT-7.5 Applications

The MT58L512L18DT-7.5 is well-suited for a range of applications that demand high-speed memory solutions. Its fast access times and reliable performance make it ideal for:

  • Networking Equipment: Routers, switches, and other networking devices that require rapid data processing and low-latency memory.
  • Telecommunications: Base stations and communication systems that need high-speed data storage and retrieval.
  • Industrial Control Systems: Real-time control systems and automation equipment that rely on fast and reliable memory.
  • Consumer Electronics: High-performance gaming consoles, multimedia devices, and other consumer electronics that benefit from fast memory access.

Conclusion of MT58L512L18DT-7.5

The MT58L512L18DT-7.5 from Micron Technology Inc. stands out as a high-performance SRAM solution with its fast access times, wide operating temperature range, and reliable design. Its parallel memory interface and surface-mount packaging make it a versatile choice for various applications, from networking equipment to industrial control systems. The chip's compliance with international safety and environmental standards further enhances its appeal. For engineers and designers seeking a reliable and high-speed memory solution, the MT58L512L18DT-7.5 is an excellent choice that offers significant advantages over similar models in the market.

Tech Specifications

Clock Frequency
Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Memory Type
Product Status
Supplier Device Package
Series
Access Time
Write Cycle Time - Word, Page
Memory Size
Package / Case
Technology
Voltage - Supply
REACH Status
Mfr
HTSUS
Package
Memory Format
RoHS Status
Moisture Sensitivity Level (MSL)

MT58L512L18DT-7.5 Documents

Download datasheets and manufacturer documentation for MT58L512L18DT-7.5

Ersa MT58L256L36DS-6      

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