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MT58V1MV18DT-6

MT58V1MV18DT-6 Description

The MT58V1MV18DT-6 is a high-performance, synchronous burst static random access memory (SRAM) IC developed by Micron Technology Inc. This device is designed to offer fast access times and reliable performance in a wide range of applications. The MT58V1MV18DT-6 features a 1M x 18 memory organization, providing a total memory size of 18 Mbit. It operates within a supply voltage range of 2.375V to 2.625V and supports a clock frequency of 166 MHz, ensuring efficient data transfer and processing.

The memory interface of the MT58V1MV18DT-6 is parallel, which is ideal for systems requiring high-speed data communication. The access time of 3.5 ns ensures rapid data retrieval, making it suitable for time-sensitive applications. The device is housed in a surface-mount 100TQFP package, which is both compact and robust, allowing for easy integration into various electronic systems. The operating temperature range of 0°C to 70°C (TA) ensures reliable performance in standard industrial environments.

MT58V1MV18DT-6 Features

• High-Speed Performance: With a clock frequency of 166 MHz and an access time of 3.5 ns, the MT58V1MV18DT-6 delivers rapid data access and processing capabilities.
• Robust Memory Organization: The 1M x 18 memory organization provides a total memory size of 18 Mbit, offering ample storage for complex applications.
• Parallel Memory Interface: The parallel memory interface ensures efficient data transfer, making it suitable for high-speed communication systems.
• Wide Operating Voltage Range: The supply voltage range of 2.375V to 2.625V provides flexibility in power supply requirements.
• Surface-Mount Packaging: The 100TQFP package is compact and easy to integrate into various electronic systems, making it ideal for space-constrained applications.
• Extended Temperature Range: The operating temperature range of 0°C to 70°C (TA) ensures reliable performance in a variety of environmental conditions.
• Compliance and Safety: The MT58V1MV18DT-6 is REACH unaffected and has a moisture sensitivity level (MSL) of 3 (168 hours), ensuring compliance with environmental regulations and reliability in manufacturing processes.

MT58V1MV18DT-6 Applications

The MT58V1MV18DT-6 is well-suited for a variety of applications that require high-speed, reliable memory solutions. Some specific use cases include:

• Networking Equipment: The fast access times and high clock frequency make it ideal for routing and switching applications where rapid data processing is crucial.
• Telecommunications: The device can be used in base stations and other telecommunication infrastructure to handle high-speed data transmission and storage.
• Industrial Control Systems: The robust memory organization and wide operating temperature range make it suitable for industrial automation and control systems.
• Consumer Electronics: The MT58V1MV18DT-6 can be used in high-end consumer electronics such as gaming consoles and multimedia devices where fast data retrieval is essential.
• Military and Aerospace: The reliability and performance characteristics make it a suitable choice for applications in the military and aerospace sectors where high performance and reliability are paramount.

Conclusion of MT58V1MV18DT-6

The MT58V1MV18DT-6 from Micron Technology Inc. is a high-performance SRAM IC that offers a unique combination of speed, reliability, and flexibility. Its fast access times, robust memory organization, and wide operating voltage range make it a versatile solution for a variety of applications. The parallel memory interface and surface-mount packaging ensure easy integration into modern electronic systems. Whether used in networking equipment, telecommunications, industrial control systems, consumer electronics, or military and aerospace applications, the MT58V1MV18DT-6 provides a reliable and efficient memory solution that meets the demands of today's high-speed, data-intensive environments.