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MT58V512V36DT-7.5

MT58V512V36DT-7.5 Description

The MT58V512V36DT-7.5 is a high-performance, 18Mbit (512K x 36) synchronous burst static random access memory (SRAM) designed by Micron Technology Inc. This IC is part of the SYNCBURST™ series, offering a parallel memory interface with a clock frequency of 133 MHz. It is packaged in a 100-pin TQFP and is suitable for surface mount applications. The device operates within a supply voltage range of 2.375V to 2.625V and an operating temperature range of 0°C to 70°C (TA). The access time is a rapid 4.2 ns, ensuring high-speed data retrieval. This volatile memory solution is ideal for applications requiring fast, reliable data storage and retrieval.

MT58V512V36DT-7.5 Features

• Memory Organization: 512K x 36, providing a total memory size of 18Mbit.
• High-Speed Performance: Clock frequency of 133 MHz and access time of 4.2 ns.
• Parallel Interface: Ensures compatibility with a wide range of systems requiring parallel data transfer.
• Power Efficiency: Operates within a supply voltage range of 2.375V to 2.625V.
• Temperature Range: Suitable for industrial applications with an operating temperature range of 0°C to 70°C (TA).
• Mounting Type: Surface mount, ideal for compact and high-density designs.
• Series: Part of the SYNCBURST™ series, known for its high-speed and efficient memory access.
• Product Status: Active, ensuring availability and support for ongoing projects.
• ECCN: 3A991B2A, indicating compliance with export regulations.
• HTSUS: 8542.32.0041, facilitating international trade and customs clearance.
• Package: Bulk packaging, suitable for large-scale production and inventory management.

MT58V512V36DT-7.5 Applications

The MT58V512V36DT-7.5 is well-suited for applications requiring high-speed, reliable memory solutions. Key applications include:

• Telecommunications: High-speed data buffering and temporary storage in routers, switches, and base stations.
• Networking: Enhancing the performance of network processors and controllers.
• Industrial Automation: Real-time data processing and control in PLCs and industrial computers.
• Medical Equipment: Fast data access for diagnostic imaging and monitoring devices.
• Military and Aerospace: Reliable memory for mission-critical systems where speed and accuracy are paramount.
• Consumer Electronics: High-speed memory for gaming consoles, high-end routers, and other performance-sensitive devices.

Conclusion of MT58V512V36DT-7.5

The MT58V512V36DT-7.5 from Micron Technology Inc. is a robust and efficient SRAM solution designed for high-speed, high-density memory applications. Its combination of a 133 MHz clock frequency, 4.2 ns access time, and 18Mbit memory size makes it an ideal choice for demanding industrial and consumer electronics applications. The parallel memory interface and surface mount packaging further enhance its versatility and ease of integration. With its active product status and compliance with international regulations, the MT58V512V36DT-7.5 is a reliable and future-proof memory solution for modern electronics.